Related papers: Characterization and Modeling of Self-Heating in N…
We report on an industry-grade CMOS-compatible qubit fabrication approach using a CMOS pilot line, enabling a yield of functional devices reaching 92.8 %, with a resistance spread evaluated across the full wafer 200 mm diameter of 12.4 %…
The microelectronics industry is pushing the fundamental limit on the physical size of individual elements to produce faster and more powerful integrated chips. These chips have nanoscale features that dissipate power resulting in nanoscale…
This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a…
Temperature estimation, known as thermometry, is a critical sensing task for physical systems operating in the quantum regime. Indeed, thermal fluctuations can significantly degrade quantum coherence. Therefore, accurately determining the…
Heat management is crucial in the design of nanoscale devices as the operating temperature determines their efficiency and lifetime. Past experimental and theoretical works exploring nanoscale heat transport in semiconductors addressed…
We characterize a superconducting qubit before and after embedding it along with its package in an absorptive medium. We observe a drastic improvement in the effective qubit temperature and over a tenfold improvement in the relaxation time…
We present an improved nuclear refrigerator reaching 0.3 mK, aimed at microkelvin nanoelectronic experiments, and use it to investigate metallic Coulomb blockade thermometers (CBTs) with various resistances R. The high-R devices cool to…
We study high-field electrical breakdown and heat dissipation from carbon nanotube (CNT) devices on SiO2 substrates. The thermal "footprint" of a CNT caused by van der Waals interactions with the substrate is revealed through molecular…
3D integrated circuit (3D-IC) technology gained acceptance due to the ability to achieve extremely high level of integration, where hundreds of ICs are stacked vertically. Such level of integration can result in local power dissipation of…
Precise thermometry is of wide importance in science and technology in general and in quantum systems in particular. Here, we investigate fundamental precision limits for thermometry on cold quantum systems, taking into account constraints…
For superconducting quantum processors, microwave signals are delivered to each qubit from room-temperature electronics to the cryogenic environment through coaxial cables. Limited by the heat load of cabling and the massive cost of…
Precise temperature measurement at micro/nanoscale is crucial across various domains including physical sciences, chemical processes, industrial production, medical diagnosis, weather forecasting, electronics, and biology. Micro/nanoscale…
We present a superconducting microresonator thermometer based on two-level systems (TLS) that is drop-in compatible with cryogenic microwave systems. The operational temperature range is 50-1000~mK (which may be extended to 5~mK), and the…
Micro-channel cooling initially aiming at small-sized high-power integrated circuits is being transferred to the field of high energy physics. Today`s prospects of micro-fabricating silicon opens a door to a more direct cooling of detector…
A superconductor with a gap in the density of states or a quantum dot with discrete energy levels is a central building block in realizing an electronic on-chip cooler. They can work as energy filters, allowing only hot quasiparticles to…
Optical-based nanothermometry represents a transformative approach for precise temperature measurements at the nanoscale, which finds versatile applications across biology, medicine, and electronics. The assembly of ratiometric fluorescent…
High 1/f noise in CryoCMOS devices is a critical parameter to keep under control in the design of complex circuits for low temperatures applications. Current models predict the 1/f noise to scale linearly with temperature, and gate oxide…
The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is systematically investigated by the direct current (DC) and low-frequency noise (LFN) characteristics within the temperature (T) range from 300 K to 4.2 K.…
Cooling high-power electronics in multilayer integrated circuits (ICs) is challenging for existing cooling methods. In this work, we designed through-chip microchannels (TCMCs) that cross the entire chip perpendicularly to the layers, with…
Recently, great progress has been made in the field of ultrasensitive microwave detectors, reaching even the threshold for utilization in circuit quantum electrodynamics. However, cryogenic sensors lack the compatibility with broad-band…