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The maturity of the chemical vapor deposition graphene-based device processing has increased from chip level demonstrations to wafer-scale fabrication in the past few years. Due to this wafer-scale, electrical characterization and analysis…
The ability to modulate an optical field via an electric field is regarded as a key function of electro-optic interconnects, which are used in optical communications and information processing systems. One of the main required devices for…
We have produced high-quality complex microwave circuits, such as multiplexed resonators and superconducting phase qubits, using a "vacuum-gap" technology that eliminates lossy dielectric materials. We have improved our design and…
Optomechanical crystals (OMCs) enable coherent interactions between optical photons and microwave acoustic phonons, and represent a platform for implementing quantum transduction between microwave and optical signals. Optical…
Photo-gated transistors based on dye-sensitized nanocrystalline titanium dioxide thin film are established. A transistor-like transport behavior characterized by the linear increase, saturated plateau, and breakdown-like increase in the…
Present semiconductor research is increasingly focusing on either higher speeds or higher linearity or both. Applications range from consumer, industrial, healthcare and military. Typically such circuits are fabricated in today's…
We study an optomechanical transistor, where an input field can be transferred and amplified unidirectionally in a cyclic three-mode optomechanical system. In this system, the mechanical resonator is coupled simultaneously to two cavity…
The present era has seen tremendous demands for low-cost electrochromic materials for visible-region multicolor display technology, paper-based, flexible, and wearable electronic devices, smart windows, and optoelectronic applications.…
In this work we test graphene electrodes in nano-metric channel n-type Organic Field EffectTransistors (OFETs) based on thermally evaporated thin films of perylene-3,4,9,10-tetracarboxylic acid diimide derivative (PDIF-CN2). By a thorough…
Inspired by experimental observations related to electrolyte-gated transistors (EGTs) where non-ideals behaviors are shown and not described by just one theoretical model, we proposed a charge carriers transport model able to describe the…
The field effect transistors (FETs) exhibited ultrahigh responsivity (107 A/W) to infrared light with great improvement of mobility in graphene / PbS quantum dot (QD) hybrid. These reported transistors are either unipolar or depletion mode…
This contribution presents the design, production, and initial testing of newly developed 4H-SiC Low Gain Avalanche Detectors (LGADs). The evaluation includes performance metrics such as the internal gain layer's efficiency in enhancing…
Nano-electronic integrated circuit technology is exclusively based on MOSFET transistor due to its scalability down to the nanometer range. On the other hand, Bipolar Junction Transistor (BJT), which provides unmatched analog…
The detector readout architecture introduced in this paper is intended for small to medium size physics experiments that have moderate bandwidth needs, and applications that require an ultimately low background radioactivity for the parts…
Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by…
In this paper, we study cross-layer optimization of low-power wireless links for reliability-aware applications while considering both the constraints and the non-ideal characteristics of the hardware in Internet-of-things (IoT) devices.…
The lack of an easily realizable complementary circuit technology offering low static power consumption has been limiting the utilization of other semiconductor materials than silicon. In this publication, a novel depletion mode JFET based…
High-precision sensors are of fundamental importance in modern society and technology.Although numerous sensors have been developed, obtaining sensors with higher levels of sensitivity and stronger robustness has always been expected. Here,…
The ion-sensitive field-effect transistor (ISFET) is an emerging technology that has received much attention in numerous research areas, including biochemistry, medicine, and security applications. However, compared to other types of…
In this paper, we propose a novel S/D engineering for dual-gated Bilayer Graphene (BLG) Field Effect Transistor (FET) using doped semiconductors (with a bandgap) as source and drain to obtain unipolar complementary transistors. To simulate…