Related papers: Low-power/high-gain flexible complementary circuit…
Optical-electrical-optical (OEO) converters are key primitives for low-latency, energy-efficient photonic computing because they enable nonlinear activation and optical signal regeneration on chip. We report two monolithically integrated…
A novel nanoelectronic device is constructed by graphyne that is robustly connected between graphene electrodes, where graphyne is composed of hexagonal carbon rings and carbon chains. Owing to similarities between the bond lengths and unit…
In ambient electromagnetic energy harvesting systems, the input power to the rectifier is low. To improve rectification efficiency, Schottky diodes, which are sensitive to low power, are commonly selected as rectifying devices to convert…
The signals received from the optical receivers like as SiPM and PMT due to the collision of energetic particles with the scintillators attached to these optical receivers, are weak and fast. To measure the number of signals as well as…
An inexpensive analog-to-digital converter has been built around the game port of the IBM personal computer. Using a single field effect transistor (FET) and three carbon resistors, it allows the game card to measure voltage, instead of its…
Non-reciprocal devices, which allow the non-reciprocal signal routing, serve as the fundamental elements in photonic and microwave circuits and are crucial in both classical and quantum information processing. The radiation-pressure-induced…
Electro-optic signal modulation provides a key functionality in modern technology and information networks. Photonic integration has enabled not only miniaturizing photonic components, but also provided performance improvements due to…
Dual-gate electrostatic modulation gives an attractive approach for transistors performance improvement, threshold voltage (Vth) and operation mode modulation, which is favorable for chemical sensor and logic applications. Here, a…
The smart transformer (ST) implemented using power electronics converters, has the capability of independent voltage control and reactive power isolation between its primary and secondary terminals. This capability provides a flexibility in…
This work presents recent advances in the development and the integration of an electrochemical (chemicalelectrical energy conversion) micro power generator used as a high voltage energy source for RF-MEMS powering. Autonomous MEMS require…
Leveraging the quantum information processing ability of superconducting circuits and long-distance distribution ability of optical photons promises the realization of complex and large-scale quantum networks. In such a scheme, a coherent…
We present theoretical estimates for a high-speed, low-loss, all-optical transistor using a micro-resonator device, whose fields interact evanescently with Rubidium vapor. We use a four-level electromagnetically induced absorption scheme to…
While various obfuscation methods exist in the digital domain, techniques for protecting Intellectual Property (IP) in the analog domain are mostly overlooked. Understandably, analog components have a small footprint as most of the surface…
In 2024, Texas operators observed 23-Hz oscillations in real power measurements close to a large electronic load (LEL). Oscillations emerged when the load's power consumption reached approximately 320 MW level and subsided as the active…
The quantum critical detector (QCD), recently introduced for weak-signal amplification [Opt. Express 27, 10482 (2019)], functions by exploiting high sensitivity near the phase transition point of first-order quantum phase transitions. We…
Control of components in integrated photonic circuits is crucial in achieving programmable devices. Operation bandwidth of a plasmonic device cannot be generally tuned once it is manufactured, especially in the visible regime. Here, we…
Nanomechanical oscillators have been employed as transducers to measure force, mass and charge with high sensitivity. They are also used in opto- or electromechanical experiments with the goal of quantum control and phenomena of mechanical…
Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg).…
Transistor is a three terminal semiconductor device normally used as an amplifier or as a switch. Here the alternating current (a.c) rectifying property of the transistor is considered. The ordinary silicon diode exhibits a voltage drop of…
A small-signal equivalent circuit of 2D-material based field-effect transistors is presented. Charge conservation and non-reciprocal capacitances have been assumed so the model can be used to make reliable predictions at both device and…