Related papers: Valley current generation using biased bilayer gra…
In gapped Dirac materials, the topological current associated with each valley can flow in opposite directions creating long-range charge-neutral valley currents. We report valley currents in hBN/bilayer-graphene heterostructures with an…
The generation of a fully valley-polarized current (FVPC) in bulk graphene is a fundamental goal in valleytronics. To this end, we investigate valley-dependent transport through a strained graphene modulated by a finite magnetic…
We show theoretically that two-dimensional direct-gap semiconductors with a valley degree of freedom, including monolayer transition-metal dichalcogenides and gapped bilayer graphene, have a longitudinal magnetoconductivity contribution…
The theoretical results are presented showing that strain-induced anisotropy of graphene spectrum gives rise to the valley currents under the illumination by normally incident light. The currents of the two graphene valleys are mutually…
We report on the possibility to simultaneously generate in graphene a {\it bulk valley-polarized dissipative transport} and a {\it quantum valley Hall effect} by combining strain-induced gauge fields and real magnetic fields. Such unique…
We describe an angularly asymmetric interface-scattering mechanism which allows to spatially separate the electrons in the two low-energy valleys of bilayer graphene. The effect occurs at electrostatically defined interfaces separating…
The existence of inequivalent valleys K and K' in the momentum space of two-dimensional hexagonal lattices provides a new electronic degree of freedom, the manipulation of which can potentially lead to new types of electronics, in analogy…
The Hall conductivity $\sigma_{xy}$ of many condensed matter systems presents a step structure when a uniform perpendicular magnetic field is applied. We report the quantum Hall effect in buckled AB-bottom-top bilayer silicene and its…
Particular strain geometry in graphene could leads to a uniform pseudo-magnetic field of order 10T and might open up interesting applications in graphene nano-electronics. Through quantum transport calculations of realistic strained…
A two-dimensional electron system placed in a magnetic field develops Landau levels, where strong Coulomb interactions lead to the appearance of many-body correlated ground states. Quantum numbers similar to the electron spin enable the…
Bilayer graphene in a perpendicular electric field can host domain walls between regions of reversed field direction or interlayer stacking. The gapless modes propagating along these domain walls, while not strictly topological,…
Single-layer and Bilayer of graphene are new classes of two-dimensional electron systems with unconventional band structures and valley degrees of freedom. The ground states and excitations in the integer and fractional quantum Hall regimes…
Despite many reports of valley-related phenomena in graphene and its multilayers, current transport experiments cannot probe valley phenomena without the application of external fields. Here we propose a gate-defined valley splitter as a…
The generation of valley current is a fundamental goal in graphene valleytronics but no practical ways of its realization are known yet. We propose a workable scheme for the generation of bulk valley current in a graphene mechanical…
Here we study the evolution of local electronic properties of a twisted graphene bilayer induced by a strain and a high curvature. The strain and curvature strongly affect the local band structures of the twisted graphene bilayer; the…
The tuneability and control of quantum nanostructures in two-dimensional materials offer promising perspectives for their use in future electronics. It is hence necessary to analyze quantum transport in such nanostructures. Material…
In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and…
Electronic properties of bilayer graphene are distinct from both the conventional two dimensional electron gas and monolayer graphene due to its particular chiral properties and excitation charge carrier dispersions. We study the effect of…
We propose a directional switching effect in a metallic device. To such end we exploit a graphene-based device with a three-terminal geometry in the presence of a magnetic field. We show that unidirectional charge and valley currents can be…
The magnetic field dependence of energy levels in gapped single- and bilayer graphene quantum dots (QDs) defined by electrostatic gates is studied analytically in terms of the Dirac equation. Due to the absence of sharp edges in these types…