We show theoretically that two-dimensional direct-gap semiconductors with a valley degree of freedom, including monolayer transition-metal dichalcogenides and gapped bilayer graphene, have a longitudinal magnetoconductivity contribution that is odd in valley and odd in the magnetic field applied perpendicular to the system. Using a quantum kinetic theory we show how this valley-dependent magnetoconductivity arises from the interplay between the momentum-space Berry curvature of Bloch electrons, the presence of a magnetic field, and disorder scattering. We discuss how the effect can be measured experimentally and used as a detector of valley polarization.
@article{arxiv.1803.05144,
title = {Valley-Dependent Magnetoresistance in Two-Dimensional Semiconductors},
author = {Akihiko Sekine and Allan H. MacDonald},
journal= {arXiv preprint arXiv:1803.05144},
year = {2020}
}