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Strain-induced Evolution of Electronic Band Structures in a Twisted Graphene Bilayer

Mesoscale and Nanoscale Physics 2015-06-05 v2 Materials Science

Abstract

Here we study the evolution of local electronic properties of a twisted graphene bilayer induced by a strain and a high curvature. The strain and curvature strongly affect the local band structures of the twisted graphene bilayer; the energy difference of the two low-energy van Hove singularities decreases with increasing the lattice deformations and the states condensed into well-defined pseudo-Landau levels, which mimic the quantization of massive Dirac fermions in a magnetic field of about 100 T, along a graphene wrinkle. The joint effect of strain and out-of-plane distortion in the graphene wrinkle also results in a valley polarization with a significant gap, i.e., the eight-fold degenerate Landau level at the charge neutrality point is splitted into two four-fold degenerate quartets polarized on each layer. These results suggest that strained graphene bilayer could be an ideal platform to realize the high-temperature zero-field quantum valley Hall effect.

Keywords

Cite

@article{arxiv.1206.5881,
  title  = {Strain-induced Evolution of Electronic Band Structures in a Twisted Graphene Bilayer},
  author = {Wei Yan and Wen-Yu He and Zhao-Dong Chu and Mengxi Liu and Lan Meng and Rui-Fen Dou and Yanfeng Zhang and Zhongfan Liu and Jia-Cai Nie and Lin He},
  journal= {arXiv preprint arXiv:1206.5881},
  year   = {2015}
}

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