Related papers: Strong electron-electron interactions in Si/SiGe q…
We demonstrate that electrons in quantum dots defined by electrostatic gates in semiconductor nanotubes freeze orderly in space realizing a `Wigner molecule'. Our exact diagonalisation calculations uncover the features of the electron…
We have realized a hybrid solid-state quantum device in which a single-electron semiconductor double quantum dot is dipole coupled to a superconducting microwave frequency transmission line resonator. The dipolar interaction between the two…
We study the spin-valley Kondo effect of a silicon quantum dot occupied by $% \mathcal{N}$ electrons, with $\mathcal{N}$ up to four. We show that the Kondo resonance appears in the $\mathcal{N}=1,2,3$ Coulomb blockade regimes, but not in…
Multielectron semiconductor quantum dots (QDs) provide a novel platform to study the role of Coulomb correlations in finite quantum systems and their impact on many-body energy spectra. An example is the formation of interaction-driven,…
We calculate that the electron states of strained self-assembled Ge/Si quantum dots provide a convenient two-state system for electrical control. An electronic state localized at the apex of the quantum dot is nearly degenerate with a state…
Using the exactly solvable excitation spectrum of two-electron quantum dots with parabolic potential, we show that the inclusion of the vertical extension of the quantum dot provides a consistent description of the experimental findings of…
Electron spins in silicon quantum dots are excellent qubits because they have long coherence times, high gate fidelities, and are compatible with advanced semiconductor manufacturing techniques. The valley degree of freedom, which results…
Studies of different experimental groups that explore the properties of a two-dimensional electron gas in silicon semiconductor systems ((100) Si metal-oxide-semiconductor field-effect transistors (MOSFETs) and (100) SiGe/Si/SiGe quantum…
Trapping electrons in quantum dots and controlling their collective quantum states is crucial for converting semiconductor structures into bits of quantum information processing. Here, we study single- and two-particle states in quantum…
We report the direct observation of coupling between a single self-assembled InAs quantum dot and a wetting layer, based on strong diamagnetic shifts of many-body exciton states using magneto-photoluminescence spectroscopy. An extremely…
We perform a systematic exact diagonalization study of spin-orbit coupling effects for stationary few-electron states confined in quasi two-dimensional double quantum dots. We describe the spin-orbit-interaction induced coupling between…
We study electrostatic quantum dot confinement for charge carriers in silicene. The confinement is formed by vertical electric field surrounding the quantum dot area. The resulting energy gap in the outside of the quantum dot traps the…
A gate electric field has a small but non-negligible effect on the phase of the valley-orbit coupling in Si quantum dots. Finite interdot tunneling between valley eigenstates in a double quantum dot is enabled by a small difference in the…
We study theoretically the electron states in a system of two vertically stacked quantum dots. We investigate the influence of the geometrical symmetry breaking (caused by the displacement as well as the ellipticity of the dots) on the…
We find that the behaviors of the voltage-current characteristics as one enters the low-density insulating state and integer quantum Hall insulating states in the ultra-clean two-dimensional electron system in SiGe/Si/SiGe quantum wells are…
We consider an electrostatically induced square lattice of quantum dots and study the role of electron-electron correlations in the resulting electronic features of the system. We utilize the Wannier functions methodology in order to…
Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximizing the energies of these states are critical to improving…
Properties of quantum dot based spin qubits have significant inter-device variability due to unavoidable presence of various types of disorder in semiconductor nanostructures. A significant source of this variability is charge disorder at…
We present here results of atomistic theory of electrons confined by metallic gates in a single layer of transition metal dichalcogenides. The electronic states are described by the tight-binding model and computed using a computational box…
Quantum dots are artificial atoms used for a multitude of purposes. Charge defects are commonly present and can significantly perturb the designed energy spectrum and purpose of the dots. Voltage controlled exchange energy in silicon double…