Related papers: Silicon Donor Array as a Disordered One-Dimensiona…
An atomistic method of calculating the spin-lattice relaxation times ($T_1$) is presented for donors in silicon nanostructures comprising of millions of atoms. The method takes into account the full band structure of silicon including the…
Possibility for collectivization of acceptor states in a semiconductor, converting it to metal, is discussed within the scope of Anderson s-d hybride model. This model is generalized for multicomponent band structure and composite acceptor…
The lattice gas model of condensation in a heterogeneous pore system, represented by a random graph of cells, is studied using an exact analytical solution. A binary mixture of pore cells with different coordination numbers is shown to…
We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a…
Recent advances in transport properties measurements of disordered materials and lattice simulations, using superconducting qubits, have rekindled interest in Anderson localization, motivating our study of highly disordered quantum…
Two-electron states bound to donors in silicon are important for both two qubit gates and spin readout. We present a full configuration interaction technique in the atomistic tight-binding basis to capture multi-electron exchange and…
Hyperdoping, overcoming the solubility limit of dopants in a crystalline semiconductor, is a fertile method for the enhancement of the electrical, structural and optical devices' performances and for the exploration of exotic phases such as…
We develop a tight-binding model based on linear combination of atomic orbitals (LCAO) methods to describe the electronic structure of arrays of acceptors, where the underlying basis states are derived from an effective-mass-theory solution…
We report on the results of molecular dynamics simulation (MD) studies of the classical two-dimensional electron crystal in the presence disorder. Our study is motivated by recent experiments on this system in modulation doped semiconductor…
We report hyperpolarization of the electronic spins associated with substitutional nitrogen defects in bulk diamond crystal. Hyperpolarization is achieved by optical pumping of nitrogen vacancy centers followed by rapid cross relaxation at…
By the use of the effective non-Hermitian Hamiltonian approach to scattering we study the distribution of the scattering matrix (S-matrix) poles in one-dimensional (1D) models with various types of diagonal disorder. We consider the case of…
Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum computing due to their exceptionally long coherence times and high fidelities. However, individual addressability of exchange coupled donor qubits with…
Lattices with a basis can host crystallographic defects which share the same topological charge (e.g.~the Burgers vector $\vec b$ of a dislocation) but differ in their microscopic structure of the core. We demonstrate that in insulators…
We demonstrate that by considering disordered single-particle Hamiltonians (or their random matrix versions) on ultrametric spaces one can generate an interesting class of models exhibiting Anderson metal-insulator transition. We use the…
The Kondo effect has been observed in a single gate-tunable atom. The measurement device consists of a single As dopant incorporated in a Silicon nanostructure. The atomic orbitals of the dopant are tunable by the gate electric field. When…
The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from…
We explore possibility of tuning photonic crystal properties via order-disorder transition. We fabricated a photonic bandgap material consisting of a three-dimensional array of conducting magnetizable spheres. The spheres self-assemble into…
We consider elastic reflection and transmission of electrons by a disordered system characterized by a $2N\!\times\!2N$ scattering matrix $S$. Expressing $S$ in terms of the $N$ radial parameters and of the four $N\!\times\!N$ unitary…
We consider a two-dimensional electron gas with long range disorder. Assuming that time reversal symmetry is broken either by an external magnetic field or, as in the case of a delta-correlated random magnetic field, by the disorder itself,…
We analyze the valley composition of one electron bound to a shallow donor close to a Si/barrier interface as a function of an applied electric field. A full six-valley effective mass model Hamiltonian is adopted. For low fields, the…