Related papers: Silicon Donor Array as a Disordered One-Dimensiona…
Recent work on atomic-precision dopant incorporation technologies has led to the creation of both boron and aluminum $\delta$-doped layers in silicon with densities above the solid solubility limit. We use density functional theory to…
Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology…
We charge an individual donor with electrons stored in a quantum dot in its proximity. A Silicon quantum device containing a single Arsenic donor and an electrostatic quantum dot in parallel is realized in a nanometric field effect…
Through periodic Training we can gradually buildup a reproducible responses in a disordered system where plasticity dominates over elasticity as is known in classical amorphous materials and soft matter 1, 6. Here we show that a similar…
While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on-chip AC electric fields. For electrons in bulk silicon, SOC…
The interplay between order and disorder in photonic lattices opens up a wide range of novel optical scattering mechanisms, resonances, and applications that can be obscured by typical ordered design approaches to photonics. Striking…
The spectral approach to infinite disordered crystals is applied to an Anderson-type Hamiltonian to demonstrate the existence of extended states for nonzero disorder in 2D lattices of different geometries. The numerical simulations shown…
We study the level-statistics of a disordered system undergoing the Anderson type metal-insulator transition. The disordered Hamiltonian is a sparse random matrix in the site representation and the statistics is obtained by taking an…
We have investigated the conductance of long quantum wires formed in GaAs/AlGaAs heterostructures. Using realistic fluctuation potentials from donor layers we have simulated numerically the conductance of four different kinds of wires.…
We study Anderson localization in disordered helical conductors that are obtained from one-dimensional conductors with spin-orbit interaction and a magnetic field, or from equivalent systems. We call such conductors "quasi-helical" because…
We evaluate the phase-coherent transport of electrons along linear structures of varying length, which are made from two types of potential wells set in either a periodic or a Fibonacci quasi-periodic sequence. The array is described by a…
The challenge of simulating many-body models with analogue physical systems requires both experimental precision and very low operational temperatures. Atomically precise placement of dopants in Si permits the construction of nanowires by…
We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting…
We show that in the one-dimensional (1D) Anderson model long-range correlations within the sequence of on-site potentials may lead to a region of extended states in the vicinity of the band centre, i.e., to a correlation-induced…
Accurate prediction of shallow-donor electron binding energies is critical for device modeling, dopant activation, and donor-based quantum technologies. Traditional beyond-DFT approaches (e.g., hybrid functionals, GW) are prohibitively…
The attributes of group-V-donor spins implanted in an isotopically purified $^{28}$Si crystal make them attractive qubits for large-scale quantum computer devices. Important features include long nuclear and electron spin lifetimes of…
Shifts from the expected nuclear magnetic resonance frequencies of antimony and bismuth donors in silicon of greater than a megahertz are observed in electrically detected magnetic resonance spectra. Defects created by ion implantation of…
Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in…
Unconventional superconductivity has been discovered in a variety of doped materials, including topological insulators, semimetals and twisted bilayers. A unifying property of these systems is strong orbital hybridization, which involves…
Donor impurity spins in silicon-28 are highly competitive qubits for upcoming solid-state quantum technologies, yet a proven scalable strategy for multi-qubit devices remains conspicuously absent. These CMOS-compatible, atomically identical…