Related papers: Temperature dependence of divacancy spin coherence…
A common solution for precise magnetic field sensing is to employ spin-active defects in semiconductors, with the NV center in diamond as prominent example. However, the three-dimensional nature of diamond limits the obtainable proximity of…
Experimental data for the uniform susceptibility, magnetization and specific heat for the material Cu2(C5H12N2)2Cl4 (abbreviated CuHpCl) as a function of temperature and external field are compared with those of three different dimerized…
Color centers in silicon carbide have become potentially versatile quantum sensors. Particularly, wide temperature range temperature sensing has been realized in recent years. However, the sensitivity is limited due to the short dephasing…
Coupling microwave cavity modes with spin qubit transitions is crucial for enabling efficient qubit readout and control, long-distance qubit coupling, quantum memory implementation, and entanglement generation. We experimentally observe the…
Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors,…
The silicon-vacancy center in diamond offers attractive opportunities in quantum photonics due to its favorable optical properties and optically addressable electronic spin. Here, we combine both to achieve all-optical coherent control of…
Neutral silicon-carbon divacancy (V$_{Si}$V$_{C}$) in cubic silicon carbide (3C-SiC) is a promising class of point defects for quantum technologies based on active crystalline centers. Within the theoretical framework of spin-polarized…
The controlled generation and manipulation of atom-like defects in solids has a wide range of applications in quantum technology. Although various defect centres have displayed promise as either quantum sensors, single photon emitters or…
Following earlier work on electron or hole liquids flowing through assemblies with magnetic fluctuations, we have recently exposed a marked correlation of the superconducting temperature Tc, for non s-wave pairing materials, with coherence…
The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless,…
Defects in wide-bandgap semiconductors provide a pathway for applications in quantum information and sensing in solid state materials. The silicon vacancy in silicon carbide has recently emerged as a new candidate for optical control of…
We discuss the fine structure and spin dynamics of spin-3/2 centers associated with silicon vacancies in silicon carbide. The centers have optically addressable spin states which makes them highly promising for quantum technologies. The…
The D'yakonov-Perel' mechanism, intimately related to the spin splitting of the electronic states, usually dominates the spin relaxation in zinc blende semiconductor quantum structures. Previously it has been formulated for the two limiting…
Silicon is promising for spin-based quantum computation because nuclear spins, a source of magnetic noise, may be eliminated through isotopic enrichment. Long spin decoherence times, $T_2$, have been measured in isotope-enriched silicon but…
Spin qubits associated with color centers are promising platforms for various quantum technologies. However, to be deployed in robust quantum devices, the variations of their intrinsic properties with the external conditions, and in…
Quantum sensors with solid state electron spins have attracted considerable interest due to their nanoscale spatial resolution.A critical requirement is to suppress the environment noise of the solid state spin sensor.Here we demonstrate a…
The spin susceptibility of noncentrosymmetric superconductors is studied when the gap function has line nodes. As examples, d-wave states, where the gap function has an additional odd-parity phase factor, are examined. The curve of the spin…
Pedagogical discussions are given on what constitutes a signature of spin-charge separation. A proposal is outlined to probe spin-charge separation in the normal state of the high $T_c$ cuprates using spin transport. Specifically, the…
The neutral divacancy and the negatively charged nitrogen-vacancy defects in 4H-silicon carbide (SiC) are two of the most prominent candidates for functioning as room-temperature quantum bits (qubits) with telecommunication-wavelength…
A spin transport model is employed to study the effects of spin dephasing induced by diffusion-driven transit-time uncertainty through semiconductor spintronic devices where drift is the dominant transport mechanism. It is found that in the…