Related papers: Temperature dependence of divacancy spin coherence…
Revealing the properties of single spin defects in solids is essential for quantum applications based on solid-state systems. However, it is intractable to investigate the temperature-dependent properties of single defects, due to the low…
Long coherence times are key to the performance of quantum bits (qubits). Here, we experimentally and theoretically show that the Hahn-echo coherence time (T2) of electron spins associated with divacancy defects in 4H-SiC reaches 1.3 ms,…
Defects in silicon carbide are of intense and increasing interest for quantum-based applications due to this material's properties and technological maturity. We calculate the multi-particle symmetry adapted wave functions of the negatively…
We study both the spin and electrical conductivities in models of relevance to the high $T_c$ cuprates. These models describe metallic states with or without spin-charge separation. We demonstrate that, given a linear in temperature…
Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological…
We conduct an experimental investigation of temperature dependence of spin diffusion length in highly-doped n-type silicon by using a non-local 3-terminal method. Whereas an effect of spin drift is not ignorable to bias- and…
Optically active defects in solids with accessible spin states are promising candidates for solid state quantum information and sensing applications. To employ these defects as quantum building blocks, coherent manipulation of their spin…
In this paper, we study the electron spin decoherence of single defects in silicon carbide (SiC) nuclear spin bath. We find that, although the natural abundance of $^{29}\rm{Si}$ ($p_{\rm{Si}}=4.7\%$) is about 4 times larger than that of…
The quantum dynamics of a two-level system coupled to an Ohmic spin- bath is studied by means of the perturbation approach based on a unitary transformation. A scattering function $\xi_k$ is introduced in the transformation to take into…
Spins of negatively charged nitrogen-vacancy (NV$^-$) defects in diamond are among the most promising candidates for solid-state qubits. The fabrication of quantum devices containing these spin-carrying defects requires position-controlled…
We report experimental studies of coherent population trapping and spin relaxation in a temperature range between 4 K and 100 mK in a silicon vacancy (SiV) center subject to a transverse magnetic field. Near and below 1 K, phonon-induced…
Direct observation of temperature dependence of individual bands of semiconductors for a wide temperature region is not straightforward, in particular. However, this fundamental property is a prerequisite in understanding the…
Silicon nanocrystals (SiNCs) have been under active investigation in the last decades and have been considered as a promising candidate for many optoelectronic applications including highly-efficient solar cells. Some of the fundamental…
We employ spin-dependent optical dipole forces to characterize the transverse center-of-mass (COM) motional mode of a two-dimensional Wigner crystal of hundreds of $^9$Be$^+$. By comparing the measured spin dephasing produced by the…
Progress with quantum technology has for a large part been realized with the nitrogen-vacancy centre in diamond. Part of its properties, however, are nonideal and this drives research into other spin-active crystal defects. Several of these…
The full realization of spin qubits for quantum technologies relies on the ability to control and design the formation processes of spin defects in semiconductors and insulators. We present a computational protocol to investigate the…
We address the temperature influence on the precessional motion of electron spins under transverse magnetic field, studied in a GaAs/AlGaAs triple quantum wells, using pump-probe Kerr rotation. In the presence of an applied in-plane…
We report the realization of the optically induced inverse population of the ground-state spin sublevels of the silicon vacancies ($V_{\mathrm{Si}}$) in silicon carbide (SiC) at room temperature. The data show that the probed silicon…
We analyze the temperature dependence of the electron spin resonance linewidth above the critical region in exchange-coupled magnetic insulators. The focus is on separating the contributions to the linewidth from spin-spin interactions,…
The negatively charged boron-vacancy center ($\mathrm{V}_{\mathrm{B}}^-$) in hexagonal boron nitride (hBN) has recently emerged as a highly promising quantum sensor. Compared to the nitrogen-vacancy (NV) center in diamond, the change with…