Related papers: Temperature dependence of divacancy spin coherence…

We measure the spin-lattice relaxation of donor bound electrons in ultrapure, isotopically enriched, phosphorus-doped $^{28}$Si:P. The optical pump-probe experiments reveal at low temperatures extremely long spin relaxation times which…

Inelastic neutron scattering measurements have been performed on single crystals of the heavy fermion compound Ce$_{0.925}$La$_{0.075}$Ru$_{2}$Si$_{2}$ in broad energy [0.1, 9.5 meV] and temperature [40 mK, 294 K] ranges in order to address…

Transition metal (TM) defects in silicon carbide have favorable spin coherence properties and are suitable as quantum memory for quantum communication. To characterize TM defects as quantum spin-photon interfaces, we model defects that have…

Nitrogen-vacancy (NV) center in diamond is an ideal candidate for quantum sensors because of its excellent optical and coherence property. However, previous studies are usually conducted at low or room temperature. The lack of full…

We performed temperature-dependent optical pump - THz emission measurements in Y3Fe5O12 (YIG)|Pt from 5 K to room temperature in the presence of an externally applied magnetic field. We study the temperature dependence of the spin Seebeck…

We report temperature and density dependences of the spin susceptibility of strongly interacting electrons in Si inversion layers. We measured (i) the itinerant electron susceptibility $\chi^*$ from the Shubnikov-de Haas oscillations in…

Paramagnetic defects and nuclear spins are the major sources of magnetic field-dependent spin relaxation in point defect quantum bits. The detection of related optical signals has led to the development of advanced relaxometry applications…

Color centers in diamond are a promising platform for quantum technologies, and understanding their interactions with the environment is crucial for these applications. We report a study of spin- lattice relaxation (T1) of the neutral…

The Seebeck coefficient, $S=L_{12}/(TL_{11})$, which is proportional to a ratio of the thermoelectric conductivity $L_{12}$ to the electric conductivity $L_{11}$ with $T$ being temperature is examined for two-dimensional Dirac electrons in…

X-ray and neutron powder diffraction data as a function of temperature are analyzed for the colossal dielectric constant material CaCu3Ti4O12. The local structure is studied using atomic pair distribution function analysis. No evidence is…

Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window for in-vivo imaging and fiber communications due to a large…

We study electronic properties of a superconducting topological insulator whose parent material is a topological insulator. We calculate the temperature dependence of the specific heat and spin susceptibility for four promising…

We present theoretical studies of temperature dependent diamagnetic-paramagnetic transitions in thin quantum rings. Our studies show that the magnetic susceptibility of metal/semiconductor rings can exhibit multiple sign flips at…

Crystal defects can confine isolated electronic spins and are promising candidates for solid-state quantum information. Alongside research focusing on nitrogen vacancy centers in diamond, an alternative strategy seeks to identify new spin…

We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…

We have studied properties of the one-3d-electron cation (Ti 3+, V 4+ ions) under the action of the low-symmetry crystal field in the presence of the spin- orbit coupling. Very anomalous temperature dependences of the magnetic…

We examine the coherence/incoherence transition temperature of a generic molecular spin. Our results demonstrates that a molecular spin with a high coherence/incoherence transition temperature should possess a low spin number and low…

Deep defects in silicon carbide (SiC) possess atom-like electronic, spin and optical properties, making them ideal for quantum-computing and -sensing applications. In these applications, deep defects are often placed within fabricated…

Optically addressable spins in widebandgap semiconductors have become one of the most prominent platforms for exploring fundamental quantum phenomena. While several candidates in 3D crystals including diamond and silicon carbide have been…

We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress…