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The mechanism of superconductivity caused by the electron-vibrational centres and their inherent oscillations in crystals and solid-state structures near room temperature and at higher temperatures - hyperconductivity is discussed and…
Here we report the fabrication and characterization of fully superconducting quantum interference proximity transistors (SQUIPTs) based on the implementation of vanadium (V) in the superconducting loop. At low temperature, the devices show…
Process-related and stress-induced changes in threshold voltage are major variability concerns in ultra-scaled CMOS transistors. The device designers consider this variability as an irreducible part of the design problem and use different…
We describe a low-cost and simple setup for hyperthermia measurements on colloidal solutions of magnetic nanoparticles (ferrofluids) with a frequency-adjustable magnetic field in the range 5-500 kHz produced by an electromagnet. By…
Current state-of-the-art superconducting microwave qubits are cooled to extremely low temperatures to avoid sources of decoherence. Higher qubit operating temperatures would significantly increase the cooling power available, which is…
Internet-of-Things (IoT) applications require nW-power current references that are robust to process, voltage and temperature (PVT) variations, to maintain the performance of IoT sensor nodes in a wide range of operating conditions.…
Optical illumination of quantum-dot qubit devices at cryogenic temperatures, while not well studied, is often used to recover operating conditions after undesired shocking events or charge injection. Here, we demonstrate systematic…
Here we review recent progress in cooling micro/nanoelectronic devices significantly below 10 mK. A number of groups worldwide are working to produce sub-millikelvin on-chip electron temperatures, motivated by the possibility of observing…
We analyze electron transport through a quantum shuttle for the applied voltage below the instability threshold. We obtain current-voltage characteristics of this system and show that at low temperature they exhibit pronounced steps. The…
A novel method for extracting threshold voltage and substrate effect parameters of MOSFETs with constant current bias at all levels of inversion is presented. This generalized constant-current (GCC) method exploits the charge-based model of…
We present a model supported by simulation to explain the effect of temperature on the conduction threshold in disordered systems. Arrays with randomly distributed local thresholds for conduction occur in systems ranging from…
Indium-Arsenide (InAs) nanowire field-effect transistors (NWFETs) are promising platforms for high-speed, low-power nanoelectronics operating at cryogenic conditions, relevant for quantum information processing. We use selective area growth…
Electric field noise from fluctuating patch potentials is a significant problem for a broad range of precision experiments, including trapped ion quantum computation and single spin detection. Recent results demonstrated strong suppression…
Small scale renewable energy harvesting is an attractive solution to the growing need for power in remote technological applications. For this purpose, localized thermal gradients on-chip--created via radiative cooling--could be exploited…
The position noise spectra of six drums on a single chip were measured on a single cooldown below 1.3 kelvin. Cryostat temperatures as low as 0.7 mK were achieved. The temperature dependence of the resonance frequency and linewidth of the…
Spin-transfer torques in a nanocontact to an extended magnetic film can create spin waves that condense to form dissipative droplet solitons. Here we report an experimental study of the temperature dependence of the current and applied…
Mechanical transduction of torque has been key to probing a number of physical phenomena, such as gravity, the angular momentum of light, the Casimir effect, magnetism, and quantum oscillations. Following similar trends as mass and force…
A spontaneous vortex state (SVS) between 30 K and 56 K was observed for the weak-ferromagnetic superconductor RuSr2GdCu2O8 with ferromagnetic Curie temperature TC = 131 K and superconducting transition temperature Tc = 56 K. The low field…
Cryogenic characterization of transition-edge sensor (TES) bolometers is a time- and labor-intensive process. As new experiments deploy larger and larger arrays of TES bolometers, the testing process will become more of a bottleneck. Thus…
Ga2O3 Schottky barrier diodes featuring a field plate and a composite SiO2/SiNx dielectric layer beneath the field plate were fabricated, achieving a breakdown voltage of 2.4 kV at room temperature. Electrical performance and degradation…