Related papers: Double nanowires for hybrid quantum devices
We study the electronic properties of InAs/EuS/Al heterostructures as explored in a recent experiment [S. Vaitiekenas \emph{et al.}, Nat. Phys. (2020)], combining both spectroscopic results and microscopic device simulations. In particular,…
We report the realization of a hybrid superconductor-quantum dot device by means of top-down nanofabrication starting from a two dimensional electron gas in a InGaAs/InAlAs semiconductor heterostructure. The quantum dot is defined by…
Topological superconductivity in quasi-one-dimensional systems is a novel phase of matter with possible implications for quantum computation. Despite years of effort, a definitive signature of this phase in experiments is still debated. A…
Hybrid superconductor/semiconductor devices play a crucial role in advancing quantum science and technology by merging the properties of superconductors and semiconductors. To operate these devices at high temperature, Niobium could…
Topological superconductivity can be engineered in semiconductors with strong spin-orbit interaction coupled to a superconductor. Experimental advances in this field have often been triggered by the development of new hybrid material…
The coexistence and competition of superconductivity and magnetism can lead to a variety of rich physics and technological applications. Recent discovery of atomic-layer superconductors and self-assembly of magnetic molecules on solid…
Proximity induced superconducting energy gap in the surface states of topological insulators has been predicted to host the much wanted Majorana fermions for fault tolerant quantum computation. Recent theoretically proposed architectures…
We report on a variety of quantum transport experiments in SnTe nanowire devices. Research on these particular nanowire devices is relevant because of their topological properties and their potential to distinguish surface states owing to…
High-fidelity analysis of translocating biomolecules through nanopores demands shortening the nanocapillary length to a minimal value. Existing nanopores and capillaries, however, inherit a finite length from the parent membranes. Here, we…
Chip-scale integrated light sources are a crucial component in a broad range of photonics applications. III-V semiconductor nanowire emitters have gained attention as a fascinating approach due to their superior material properties,…
We propose a transistor-like circuit including two serially connected segments of a narrow superconducting nanowire joint by a wider segment with a capacitively coupled gate in between. This circuit is made of amorphous NbSi film and…
Coupled semiconductor nanostructures with a high degree of tunability are fabricated using local oxidation with a scanning force microscope. Direct oxidation of the GaAs surface of a Ga[Al]As heterostructure containing a shallow…
Advances in quantum technology may come from the discovery of new materials systems that improve the performance or allow for new functionality in electronic devices. Lead telluride (PbTe) is a member of the group IV-VI materials family…
Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and…
An ordinary superconducting quantum interference device (SQUID) contains two weak links connected in parallel. We model a multiple-wire SQUID (MW-SQUID), generalized in two ways. First, the number of weak links, which are provided by…
We report a nanoscale device concept based on a highly doped $\delta$-layer tunnel junction embedded in a semiconductor for charge sensing. Recent advances in Atomic Precision Advanced Manufacturing (APAM) processes have enabled the…
The influence of hydride exposure on previously unreported self-assembled InP(As) nanostructures is investigated, showing an unexpected morphological variability with growth parameters, and producing a large family of InP(As) nanostructures…
The recent proposals of devices with overlapping Andreev bound states (ABS) open up the opportunities to control and fine-tune their spectrum, that can be used in various applications. In this Article, we study the ABS in a device…
We report a unique experimental approach to create topological superconductors by inducing superconductivity into epitaxial metallic thin film with strong spin-orbit coupling. Utilizing molecular beam epitaxy technique under ultra-high…
We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a…