Related papers: Double nanowires for hybrid quantum devices
Matter at intermediate baryon densities and low temperatures is notoriously hard to tackle theoretically. Whereas lattice methods cannot cover more than rather small densities, perturbative methods are only applicable at much higher…
Superconductor/semiconductor hybrid devices have attracted increasing interest in the past years. Superconducting electronics aims to complement semiconductor technology, while hybrid architectures are at the forefront of new ideas such as…
In this chapter quantum many body theoretical methods have been used to study properties of GaAs - and InAs - based, small semiconductor compound quantum dots (QDs) containing manganese or vanadium atoms. Interest to such systems has grown…
Being able to combine different materials allows taking advantage of different properties and device engineering that cannot be found or exploited within a single material system. In quantum nano-photonics, one might want to increase the…
We present a conceptual framework of planar SIS mixer array receivers and the studies on the required techniques. This concept features membrane-based on-chip waveguide probes and a quasi-two-dimensional local-oscillator distribution…
With the development of quantum technology, hybrid devices that combine superconductors (S) and semiconductors (Sm) have attracted great attention due to the possibility of engineering structures that benefit from the integration of the…
We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The…
Semiconductor-superconductor hybrid systems have outstanding potential for emerging high-performance nanoelectronics and quantum devices. However, critical to their successful application is the fabrication of high-quality and reproducible…
In a device with a superconductor coupled to two parallel quantum dots (QDs) the electrical tunability of the QD levels can be used to exploit non-classical current correlations due to the splitting of Cooper pairs. We experimentally…
The semiconductor quantum dot nanopillar array in InAs/GaAs was fabricated. In consideration of the quantum dot density, the pillar diameter was determined as only a few quantum dots were involved in a pillar. The lattice constant of a…
Quantum-dot (QD) nanolasers integrated on a silicon photonic circuit are demonstrated for the first time. QD nanolasers based on one-dimensional photonic crystal nanocavities containing InAs/GaAs QDs are integrated on CMOS-processed silicon…
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon…
We propose an experimentally viable setup for the realization of one-dimensional ultracold atom gases in a nanoscale magnetic waveguide formed by single doubly-clamped suspended carbon nanotubes. We show that all common decoherence and atom…
Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging…
A III-V compound semiconductor nanowire is an attractive material for a novel hybrid quantum interface that interconnects photons, electrons, and phonons through a wavelength-tunable quantum structure embedded in its free-standing…
Superconducting quantum devices provide excellent connectivity and controllability while semiconductor spin qubits stand out with their long-lasting quantum coherence, fast control, and potential for miniaturization and scaling. In the last…
Hybrid superconductor-semiconductor(SC-SM) nanowires remain one of the foremost platforms for engineering topological superconductivity and Majorana zero modes(MZMs) towards fault-tolerant topological qubits, especially with the rapid…
Phase winding effects in hollow semiconductor nanowires with superconducting shells have been proposed as a route to engineer topological superconducting states. We investigate GaAs/InAs core/shell nanowires with half-shells of epitaxial…
With the recent achievement of extremely high-quality epitaxial interfaces between InAs nanowires and superconducting Al shells with strong superconductor-semiconductor tunnel coupling, a new regime of proximity-induced superconductivity in…
A fabrication process has been developed for fully planarized Nb-based superconducting inter-layer connections (vias) with minimum size down to 250 nm for superconductor very large scale integrated (VLSI) circuits with 8 and 10…