Related papers: There is Plenty of Room for THz Tunneling Electron…
We develop a new approach to electron transport in mesoscopic systems by using a particular single-particle basis. Although this basis generates redundant many-particle amplitudes, it greatly simplifies the treatment. By using our method…
We develop in this work a simple qualitative quantum electron transport model, in the strong light-matter coupling regime under dipole approximation, able to capture polaritonic signatures in the time-dependent electrical current. The…
This work reports the design and analysis of an n-type tunneling field effect transistor based on InN. The tunneling current is evaluated from the fundamental principles of quantum mechanical tunneling and semiclassical carrier transport.…
The physics of low subthreshold devices is interpreted in terms of a gate dependent change in their mode averaged transmission function, in addition to a capacitive shift in their overall mode spectrum. Accordingly, we explore a variety of…
The Landauer expression for computing current-voltage characteristics in nanoscale devices is efficient and widely applicable but not suited to transient phenomena and time dependent currents because it assumes that the charge carrier…
We consider the time-dependent electron transport through a quantum dot connected to multiple leads in the presence of the additional over-dot (bridge) tunnelling channels by using the evolution operator technique. Each terminal and quantum…
Consider a bunch of interacting electrons confined in a quantum dot. The later is suddenly coupled to semi-infinite biased leads at an initial instant $t=0$. We identify the dominant contribution to the ergodic current in the off-resonant…
The environment of a quantum dot, which is connected to two leads, is modeled by telegraph noise, i.e. random Markovian jumps of the (spinless) electron energy on the dot between two levels. The temporal evolutions of the charge on the dot…
Scaling field-effect transistors (FETs) into the sub-10-nm regime fundamentally alters the transport mechanism, challenging long-standing design rules. This study investigates monolayer TMD FETs with channel lengths from 12 nm to 3 nm,…
The Fowler-Nordheim tunneling current formula has been widely used in the design of devices based on metal/insulator (metal/semiconductor) heterojunctions with triangle potential barriers, such as the flash memory. Here we adopt the model…
The traversal time for tunneling is a measure of the time during which the transmitted particle can be affected by interactions localized in the barrier. The Buttiker-Landauer approach, which estimates this time by imposing an internal…
In the B\"uttiker-Landauer perturbation approach to electron tunnelling, through a time-modulated rectilinear potential barrier, the Tien-Gordon identity was invoked, together with its infinite energy spectrum. Here, an exact treatment is…
The epsilon-near-zero (ENZ) tunneling phenomenon allows full transmission of waves through a narrow channel even in the presence of a strong geometric mismatch. Here we experimentally demonstrate nonlinear control of the ENZ tunneling by an…
Following our recent interest in metamaterial-based devices supporting resonant tunneling, energy squeezing and supercoupling through narrow waveguide channels and bends, here we analyze the fundamental physical mechanisms behind this…
Sequential tunneling model is used to study electron transport in molecular rectifiers based on structures of donor-bridge-acceptor type. The device is made of two metallic electrodes connected by a molecule, which contains acceptor and…
Output power of resonant-tunneling-diode (RTD) terahertz (THz) emitters can be modulated by the bias modulation similar to a semiconductor laser. This property is useful for applications of the THz waves to wireless communications and…
The fully nonlinear response of a many-level tunneling system to a strong alternating field of high frequency $\omega$ is studied in terms of the Schwinger-Keldysh nonequilibrium Green functions. The nonlinear time dependent tunneling…
In systems with non-local potentials or other kinds of non-locality, the Landauer-B\"uttiker formula of quantum transport leads to replace the usual gauge-invariant current density $\textbf{J}$ with a current $\textbf{J}^{ext}$ which has a…
Recent electronic transport experiments using metallic contacts attached to proteins identified some 'stylized facts' which contradict conventional wisdom that increasing either the spatial distance between the electrodes or the temperature…
We present a transparent and analytically tractable approach to the problem of time-dependent electron transport through tunneling barriers. Using the Single-Electron Approach, we study a model system composed of a time-dependent tunneling…