Related papers: There is Plenty of Room for THz Tunneling Electron…
Within the framework of the scattering matrix formalism the nonlinear Kubo theory for electron transport in the metal with a tunnel barrier has been considered. A general expression for the mean electrical current was obtained. It…
The spin-dependent transport of the electrons tunneling through a resonant tunneling structure with ferromagnetic multi-terminal under dc and ac fields is explored by means of the nonequilibrium Green function technique. A general…
Time-dependent nonequilibrium Green's functions are used to study electron transport properties in a device consisting of two linear chain leads and a time-dependent interleads coupling that is switched on non-adiabatically. We derive a…
We present a simple model for electron transport in semiconductor devices that exhibit tunneling between the conduction and valence bands. The model is derived within the usual Bloch-Wannier formalism by a k-expansion, and is formulated in…
The frequency dependence of negative differential conductance (NDC) is an important property for the resonant-tunneling-diode terahertz source. Among several phenomena determining the frequency dependence, this paper shows that the effect…
Earlier, in the CINT program at Los Alamos National Laboratory, we focused ultrafast mode-locked lasers on the tip-sample junction of a scanning tunneling microscope to generate currents at hundreds of harmonics of the laser pulse…
It is shown that in a structure consisting of a superconducting ring-shaped electrode overlapped by a normal metal contact through a thin oxide barrier, measurements of the tunnel current in magnetic field can probe persistent currents in…
Numerous proposed and developed superconducting fault current limiters and self-limiting transformers limit successfully fault currents but do not provide uninterrupted supplying of consumers. A design investigated in the work combines the…
Transient {\it time-domain resonances} found recently in time-dependent solutions to Schr\"{o}dinger's equation are used to investigate the issue of the tunneling time in rectangular potential barriers. In general, a time frequency analysis…
High frequency operation of tunneling real-space transfer transistor (TRSTT) in the negative differential resistance (NDR) regime is assessed by calculating the device common source unity current gain frequency (fT) range with a small…
We study the tunneling through delta and double delta potentials in fractional quantum mechanics. After solving the fractional Schr\"odinger equation for these potentials, we calculate the corresponding reflection and transmission…
We directly trace the near- and mid-infrared transmission change of a VO$_2$ thin film during an ultrafast insulator-to-metal transition triggered by high-field multi-terahertz transients. Non-thermal switching into a metastable metallic…
Nonlinear tunneling current through a quantum dot (an Anderson impurity system) subject to both constant and alternating electric fields is studied in the Kondo regime. A systematic diagram technique is developed for perturbation study of…
We carry out a layer-by-layer investigation to understand electron transport across metal-insulator-metal junctions. Interfacial structures of junctions were studied and characterized using first-principles density functional theory within…
The chiral Luttinger liquid model for the edge dynamics of a two-dimensional electron gas in a strong magnetic field is derived from coarse-graining and a lowest Landau level projection procedure at arbitrary filling factors $\nu<1$ --…
The Zener-Klein (ZK) interband tunneling in graphene layers (GLs) with the lateral n-i-n and p-i-n junctions results in the nonlinear I-V characteristics that can be used for the rectification and detection of the terahertz (THz) signals.…
In this paper, the interaction and transmission time of quantum density solitons waves representing particles passing through finite barrier potentials is investigated. Using the conservation of energy and of quantum density, it is first…
Periodic driving of quantum dots is analyzed as a basis for developing dynamic switching devices. We study transport through periodically modulated energy levels which are coupled to leads via tunneling coefficients. Utilizing Floquet…
Theoretical predictions are made for the current-voltage characteristics of two-dimensional heterojunction interlayer tunneling field-effect transistors (Thin-TFETs), focusing on the magnitude of the current that is achievable in such…
In this Letter, we study the transient electron transfer phenomena of single-electron devices with alternating external gate voltages. We obtain a high frequency limit for pumping electrons one at a time in single-electron devices. Also, we…