Related papers: Micrometer-thick, atomically random Si0.06Ge0.90Sn…
Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we exploit these attributes along with the enhanced lattice…
By independently engineering strain and composition, this work demonstrates and investigates direct band gap emission in the mid-infrared range from GeSn layers grown on silicon. We extend the room-temperature emission wavelength above ~4.0…
Strain engineering has been a ubiquitous paradigm to tailor the electronic band structure and harness the associated new or enhanced fundamental properties in semiconductors. In this regard, semiconductor membranes emerged as a versatile…
Silicon photonics has thrived in telecommunications over recent decades, and its extension to the mid-infrared range has the potential to unlock valuable opportunities for sensing, imaging, and free-space communications. With this…
Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for applications in quantum computing, artificial intelligence,…
Achieving high crystalline quality Ge$_{1-x}$Sn$_{x}$ semiconductors at Sn content exceeding 10\% is quintessential to implementing the long sought-after silicon-compatible mid-infrared photonics. Herein, by using sub-20 nm Ge nanowires as…
Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology, tunable band structure, and potential for a direct bandgap…
(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is…
Compound semiconductors have been the predominant building blocks for the current mid-infrared thermophotovoltaic devices relevant to sub-2000 K heat conversion and power beaming. However, the prohibitively high cost associated with these…
A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened a completely new venue from the traditional III-V integration approach. We demonstrated…
Semiconductor nanowires have shown great potential for enabling ultra-compact lasers for integrated photonics platforms. Despite the impressive progress in developing nanowire lasers, their integration into Si photonics platforms remains…
Mid-infrared silicon photonics has recently emerged as a new technology for a wide range of applications such as optical communication, lidar, and bio-sensing. One key component enabling this technology is the mid-infrared optical modulator…
Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon…
Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge cannot be directly grown on Si due to its large lattice…
Cost-effective mid-wave infrared (MWIR) optoelectronic devices are of utmost importance to a plethora of applications such as night vision, thermal sensing, autonomous vehicles, free-space communication, and spectroscopy. To this end,…
The recent synthesis of MoSi2N4 material, along with theoretical predictions encompassing the entire family of chemical analogs, has opened up a new array of low-dimensional materials for a diverse range of optoelectronics and photovoltaics…
Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors…
On-chip integration of two-dimensional (2D) materials offers great potential for the realization of novel optoelectronic devices in different photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to…
Sn-containing Si and Ge alloys belong to an emerging family of semiconductors with the potential to impact group IV semiconductor devices. Indeed, the ability to independently engineer both lattice parameter and band gap holds the premise…
Thermophotovoltaic (TPV) cells are increasingly attractive for applications in industrial waste heat harvesting, aerospace energy management, and compact power generation. Deploying midwave-infrared (MWIR) TPV in practical applications…