Related papers: Micrometer-thick, atomically random Si0.06Ge0.90Sn…
We investigate the temperature effect on the electronic band structure and optical absorption property of wide-band-gap ternary nitride MgSiN$_2$ using first-principles calculations. We find that electron-phonon coupling leads to a sizable…
It is anticipated that wide-bandgap semiconductors (WBGSs) would be useful materials for energy production and storage. A well-synthesized, yet, scarcely explored diamond-like quaternary semiconductor-Li$_2$ZnGeS$_4$ has been considered for…
When the sulfur element is hyperdoped into crystalline silicon to a supersaturated density of 1020 cm-3, it can enhance the sub-bandgap light absorption of silicon from 0 to 70%, with the antireflection of surface dome structures. On the…
Remarkable systems have been reported recently using the polylithic integration of semiconductor optoelectronic devices and plasmonic materials exhibiting epsilon-near-zero (ENZ) and negative permittivity. In traditional noble metals, the…
Monolithically combining silicon nitride (SiNx) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide wavelength range of ~400-4000 nm. With the development of nitride, arsenide, and…
The sensitivity of laser interferometers can be pushed into regimes that enable the direct observation of quantum behaviour of mechanical oscillators. In the past, membranes with subwavelength thickness (thin films) have been proposed as…
We present ab initio calculations of the electronic and optical properties of hexagonal SiGe alloys in the lonsdaleite structure. Lattice constants and electronic band structures in excellent agreement with experiment are obtained using…
Material absorption is a key limitation in nanophotonic systems; however, its characterization is often obscured by scattering and diffraction loss. Here we show that nanomechanical frequency spectroscopy can be used to characterize the…
The recent progress in chip-scale integrated photonics has stimulated the rapid development of material platforms with desired optical properties. Among the different material platforms that are currently investigated, the third-generation…
Silicon is an extremely attractive material platform for integrated optics at telecommunications wavelengths, particularly for integration with CMOS circuits. Developing detectors and electrically pumped lasers at telecom wavelengths are…
Hexagonal SiGe is a promising material for combining electronic and photonic technologies. In this work, the energetic, structural, elastic and electronic properties of the hexagonal polytypes (2$H$, 4$H$ and 6$H$) of silicon and germanium…
While recent advances in reconfigurable photonics have provided new avenues for manipulating light on the subwavelength scale, on-demand control of infrared absorption remains elusive. Here, we experimentally demonstrate a plasmonic…
We demonstrate integration of an amorphous silicon photodetector with thin film lithium niobate photonic platform operating in the visible wavelength range. We present the details of the design, fabrication, integration and experimental…
In this paper, we demonstrate the integration of photonic devices on sapphire substrates using multi-layer depressed cladding waveguides at both 780 nm and 1550 nm. The devices are up to 10-cm long and written at depths down to 400 um. The…
We propose and demonstrate subwavelength grating (SWG) metamaterial waveguides and ring resonators on a silicon nitride platform for the first time. The SWG waveguide is engineered such that a large overlap of 53% of the Bloch mode with the…
Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic…
A long-wavelength infrared (IR) photodetector based on two-dimensional materials working at room temperature would have wide applications in many aspects in remote sensing, thermal imaging, biomedical optics, and medical imaging. However,…
The challenge of next generation datacom and telecom communication is to increase the available bandwidth while reducing the size, cost and power consumption of photonic integrated circuits. Silicon (Si) photonics has emerged as a viable…
The development of tandem photovoltaics and photoelectrochemical solar cells requires new absorber materials with band gaps in the range of ~1.5-2.3 eV, for use in the top cell paired with a narrower-gap bottom cell. An outstanding…
In this paper we present a novel fabrication technique for silicon nitride (Si3N4) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in…