Related papers: Ion-Beam Modification of Metastable Gallium Oxide …

Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via metalorganic chemical vapor deposition (MOCVD). The…

We report, for the first time, the characterizations on optical nonlinearities of beta-phase gallium oxide (\b{eta}-Ga2O3), where both (010) \b{eta}-Ga2O3 and (-201) \b{eta}-Ga2O3 were examined for two-photon absorption (TPA) coefficient,…

Using the recently developed Coulomb Quantum Orbit Strong-Field Approximation (CQSFA), we perform a systematic analysis of several features encountered in above-threshold ionization (ATI) photoelectron angle-resolved distributions (PADs),…

In this work we describe the thermodynamics and mechanism of CO$_2$ polymorphic transitions under pressure from form I to form III combining standard molecular dynamics, well-tempered metadynamics and committor analysis. We find that the…

Fluorite oxides such as HfO$_2$ exhibit rich and tunable phase behavior, making them promising candidates for next generation electronic devices. A key challenge is to design amorphous HfO$_2$-based high-$k$ materials with both structural…

Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N…

An effect of alloying of the monoclinic beta- Ga2O3 with Al2O3 and In2O3 on the photoluminescent, thermoluminescent and persistent luminescent properties of Cr3+ ions has been comprehensively investigated. For this purpose, various series…

$\beta$-Ga$_2$O$_3$ is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission electron microscopy (STEM), we find the…

Interactions of Poly (Ethylene Oxide) [PEO] and gamma irradiation of variable doses (1-30 kGy) on the thermal, crystalline and structural properties are investigated using DSC and FTIR technique. Two states of PEO, viz. powder (P-S-series)…

Gallium oxide is an ultra-wide bandgap semiconductor with exceptional properties for power electronics and UV-C optoelectronics, but its behavior under illumination remains poorly understood. In this work, we investigate how optically…

We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has been varied from x = 0 to 0.66, confirmed by Rutherford…

This paper addresses the structural characterisation of a series of U/Fe, U/Co and U/Gd multilayers. X-ray reflectivity has been employed to investigate the layer thickness and roughness parameters along the growth direction and high-angle…

Developing phosphors with narrow photoluminescence emission peaks and high chromatic stability holds significant importance in light-emitting diode (LED) display technologies, where a wide color gamut is essential to achieve the Rec. 2020…

Realization of superconductivity in Group IV semiconductors could have a strong impact in the direction quantum technologies will take in the future. Therefore, it is imperative to understand the nature of the superconducting phases in…

Hybridization of semiconducting and magnetic materials into a single heterostructure is believed to be potentially applicable to the design of novel functional spintronic devices. In the present work we report epitaxial stabilization of…

We report the doping high concentration of tetravalent Ge4+ ions (5 mol % for x = 0.05 to 30 mol % for x = 0.30) at the Fe3+ sites of Fe2-xGexO3 system by chemical coprecipitation route. The charge state of Fe and Ge ions has been modified…

The effect of Mg $\delta$-doping on the structural, electrical and optical properties of GaN grown $\textsl{via}$ metalorganic vapor phase epitaxy has been studied using transmission electron microscopy, secondary ion mass spectroscopy,…

Organic-inorganic halide perovskites (OIHPs) are promising optoelectronic materials, but their instability under radiation environments restricts their durability and practical applications. Here we employ electron and synchrotron X-ray…

We propose, based on ab initio calculations, that the ground state (001) surface of $\alpha$-Ga should be covered by two layers of GaIII, a denser phase which is stable in the bulk only at high pressure and temperature. We discuss how this…

There is considerable controversy about swift heavy ion (SHI) irradiation induced displacive phase transitions in thermally insulating oxides. We present here unambiguous evidence for tetragonal to monoclinic and rhombohedral to monoclinic…