Related papers: Intertwined Ferroelectricity and Topological State…
Vertically stacked layers derived from non-ferroelectric monolayers offer a promising route to two-dimensional (2D) ferroelectrics, where polarization switching occurs via interlayer sliding at sub-unit cell scales. Here, we develop a…
Ferroelectric and two-dimensional materials are both heavily investigated classes of electronic materials. This is unsurprising since they both have superlative fundamental properties and high-value applications in computing, sensing etc.…
The emergence of topological magnetism in two-dimensional (2D) van der Waals (vdW) magnetic materials promoted 2D heterostructures as key building-blocks of devices for information technology based on topological concepts. Here, we…
In recent years, sliding ferroelectricity has emerged as a topic of significant interest due to its possible application in non-volatile, reconfigurable storage devices. This phenomenon is unique to two-dimensional van der Waals materials,…
2D van der Waals ferroelectric semiconductors have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several accomplishments have been reported in ferroelectric…
The two-dimensional (2D) multiferroic materials have widespread of application prospects in facilitating the integration and miniaturization of nanodevices. However, it is rarely coupling between the magnetic, ferroelectric, and ferrovalley…
We address the co-existence of massless and massive topological edge states at the interface between two materials with different topological phases. We modify the well known Bernevig-Hughes-Zhang model to introduce a smooth function…
Three-dimensional (3D) topological ferroelectric (FE) insulators, in which topological and FE orders naturally coexist, enable field-controlled spintronic devices. In this work, we predict a new structure of bismuth monohalides Bi4Br4 and…
The bistability of charge polarization in ferroelectric materials has long been the basis of ferroelectric devices. However, the ferroelectricity tends to be vanishing as the thickness of materials is reduced to a few nanometers or thinner…
Ferroelectricity in atomically thin bilayer structures has been recently predicted1 and measured[2-4] in two-dimensional (2D) materials with hexagonal non-centrosymmetric unit-cells. Interestingly, the crystal symmetry translates lateral…
Van der Waals (vdW) polytypes of broken inversion and mirror symmetries were recently shown to exhibit switchable electric polarization even at the ultimate two-layer thin limit. Their out-of-plane polarization was found to accumulate in a…
The first switchable electric polarization in metals was recently discovered in bilayer and trilayer WTe2. Strangely, despite the tininess of the ordered polarization, the ferroelectricity survives up to 350 K, rendering the mechanism of…
Developing new multiferroics at the two-dimensional (2D) limit with energy-efficient magnetoelectric coupling can inform the interplay physics of novel orders and advance on-chip high-performance computing applications. Here we apply…
We study the distinctive features of the interplay between the interlayer superconductivity and ferroelectricity in van der Waals heterostructures. Corresponding analysis is carried out within the framework of the quasiclassical Eilenberger…
In this paper we predict that the magnetoelectric response of two-dimensional (2D) antiferromagnets is determined by the topology of the ground state. This topological magnetoelectric response, encoded in the spin magnetoelectric…
Van der Waals (vdW) heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the…
Sliding ferroelectricity is a phenomenon that arises from the insurgence of spontaneous electronic polarization perpendicular to the layers of two-dimensional (2D) systems upon the relative sliding of the atomic layer constituents. Because…
We propose that a spin-dependent second-order topological insulator can be realized in monolayer FeSe/GdClO heterostructure, in which substrate GdClO helps to stabilize and enhance the antiferromagnetic order in FeSe. The second-order…
Van der Waals "sliding" ferroelectric bilayers, whose electric polarization is locked to the interlayer alignment, show promise for future non-volatile memory and other nanoelectronic devices. These applications require a fuller…
2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the…