Vertically stacked layers derived from non-ferroelectric monolayers offer a promising route to two-dimensional (2D) ferroelectrics, where polarization switching occurs via interlayer sliding at sub-unit cell scales. Here, we develop a theory of slidetronics based on the notion that sliding-induced switching P→P′ can also be achieved by applying an appropriate point-group operator G to the entire system, such that P′=GP. Interlayer sliding and the transformation induced by the generator G are thus equivalent in describing the relationship between the initial and final layer configurations. From this symmetry principle, we deduce that slidetronics can be classified by generators G; the generator G must act as a symmetry operator for the constituent layers, while it is not a symmetry operator for the stacked layers as a whole; for a given 2D material, G determines the interlayer sliding required for polarization switching; and sliding-induced complete polarization inversion is impossible in bilayers but can be realized in multilayers (e.g., PdSe2 trilayers). These findings provide a framework for designing 2D ferroelectrics with targeted polarization-switching properties, as demonstrated through case studies of real materials.
@article{arxiv.2502.20832,
title = {Theory of Slidetronics in Ferroelectric van der Waals Layers},
author = {Byeoksong Lee and Minki Lee and Joongoo Kang},
journal= {arXiv preprint arXiv:2502.20832},
year = {2025}
}