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Theory of Slidetronics in Ferroelectric van der Waals Layers

Materials Science 2025-03-03 v1 Mesoscale and Nanoscale Physics

Abstract

Vertically stacked layers derived from non-ferroelectric monolayers offer a promising route to two-dimensional (2D) ferroelectrics, where polarization switching occurs via interlayer sliding at sub-unit cell scales. Here, we develop a theory of slidetronics based on the notion that sliding-induced switching PPP \rightarrow P' can also be achieved by applying an appropriate point-group operator GG to the entire system, such that P=GPP' = G P. Interlayer sliding and the transformation induced by the generator GG are thus equivalent in describing the relationship between the initial and final layer configurations. From this symmetry principle, we deduce that slidetronics can be classified by generators GG; the generator GG must act as a symmetry operator for the constituent layers, while it is not a symmetry operator for the stacked layers as a whole; for a given 2D material, GG determines the interlayer sliding required for polarization switching; and sliding-induced complete polarization inversion is impossible in bilayers but can be realized in multilayers (e.g., PdSe2_2 trilayers). These findings provide a framework for designing 2D ferroelectrics with targeted polarization-switching properties, as demonstrated through case studies of real materials.

Keywords

Cite

@article{arxiv.2502.20832,
  title  = {Theory of Slidetronics in Ferroelectric van der Waals Layers},
  author = {Byeoksong Lee and Minki Lee and Joongoo Kang},
  journal= {arXiv preprint arXiv:2502.20832},
  year   = {2025}
}