Related papers: Boron and Barium Incorporation at the 4H-SiC/SiO2 …
Two-dimensional (2D) semiconductors are promising material candidates for next-generation nanoelectronics. However, there are fundamental challenges related to their metal-semiconductor (MS) contacts which limit the performance potential…
The production of ion beams from the interaction of a circularly polarized laser pulse with a nanometric double-layer target is discussed in the regime where all electrons are expelled from the target by laser radiation pressure.…
The interaction of intralayer and interlayer excitons is studied in a two-dimensional semiconductor, homobilayer MoS$_2$. It is shown that the measured optical susceptibility reveals both the magnitude and the sign of the coupling…
The $^{133}\mathrm{Ba}^+$ ion is a promising candidate as a high-fidelity qubit, and the $^{137}\mathrm{Ba}^+$ isotope is promising as a high-fidelity qudit ($d>2$). Barium metal is very reactive, and $^{133}\mathrm{Ba}^+$ is radioactive…
A prototype laser ion source that could demonstrate the possibility of producing intense pulsed high charge state ion beams has been established with a commercial Nd:YAG laser (E max = 3 J, 1064 nm, 8-10 ns) to produce laser plasma for the…
We demonstrate an optical single qubit based on 6S1/2 to 5D5/2 quadrupole transition of a single Ba+ ion operated by diode based lasers only. The resonance wavelength of the 6S1/2 to 5D5/2 quadrupole transition is about 1762 nm which…
Niobium is commonly used for superconducting quantum systems as readout resonators, capacitors, and interconnects. The coherence time of the superconducting qubits is mainly limited by microwave dissipation attributed to two-level system…
Two-dimensional semiconductors have emerged as a new class of materials for nanophotonics for their strong exciton-photon interaction and flexibility for engineering and integration. Taking advantage of these properties, we engineer an…
Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of X-ray radiation damage up to these high doses, MOS capacitors and…
New superconducting materials, particularly iron-based superconductors (IBS), have recently attracted attention for their potential applications in particle detectors and accelerators. This paper discusses the application of these materials…
Broadband mid-infrared light sources are highly desired for wide-ranging applications that span free-space communications to spectroscopy. In recent years, silicon has attracted great interest as a platform for nonlinear optical wavelength…
All-dielectric optical metasurfaces with high quality (Q) factors have so far been hampered by the lack of simultaneously lossless and high refractive index (RI) materials over the full visible spectrum. To achieve broad spectral coverage,…
We demonstrate heavy and hyper doping of ZnO by a combination of gallium (Ga) ion implantation using a focused ion beam (FIB) system and post-implantation laser annealing. Ion implantation allows for the incorporation of impurities with…
We report findings on the Ion Beam Induced Charge (IBIC) characterization of a 4H-SiC Schottky barrier diode (SBD), in terms of the modification of the Charge Collection Efficiency (CCE) distribution induced by 20 MeV C ions irradiations…
Understanding interfacial thermal transport is essential for improving thermal management in high-speed power electronic devices, where the efficient removal of excess heat is a critical challenge. In this study, a machine learning…
A twin surface dielectric barrier discharge on the microsecond scale was used in combination with a two-component coating to oxidize 300 ppm n-butane as a model volatile organic compound to CO2 and H2O in synthetic air at room temperature…
This study presents a comprehensive investigation of chemical, structural, and magnetic properties of Ti/Ni multilayer systems with period thicknesses of 4 nm and 10 nm. Particular attention was paid to the characterization of the…
Lithium niobate on insulator (LNOI), regarded as an important candidate platform for optical integration due to its excellent nonlinear, electro-optic and other physical properties, has become a research hotspot. Light source, as an…
This paper introduces an optically controlled 4H-SiC MOSFET designed to avoid the gate-oxide interface unreliability and electromagnetic interference (EMI) susceptibility inherent in conventional voltage-driven devices. By replacing the…
An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a…