English

Capacitively-coupled and inductively-coupled excitons in bilayer MoS$_2$

Mesoscale and Nanoscale Physics 2022-09-14 v1

Abstract

The interaction of intralayer and interlayer excitons is studied in a two-dimensional semiconductor, homobilayer MoS2_2. It is shown that the measured optical susceptibility reveals both the magnitude and the sign of the coupling constants. The interlayer exciton interacts capacitively with the intralayer B-exciton (positive coupling constant) consistent with hole tunnelling from one monolayer to the other. Conversely, the interlayer exciton interacts inductively with the intralayer A-exciton (negative coupling constant). First-principles many-body calculations show that this coupling arises via an intravalley exchange-interaction of A- and B-excitons.

Keywords

Cite

@article{arxiv.2108.04248,
  title  = {Capacitively-coupled and inductively-coupled excitons in bilayer MoS$_2$},
  author = {Lukas Sponfeldner and Nadine Leisgang and Shivangi Shree and Ioannis Paradisanos and Kenji Watanabe and Takashi Taniguchi and Cedric Robert and Delphine Lagarde and Andrea Balocchi and Xavier Marie and Iann C. Gerber and Bernhard Urbaszek and Richard J. Warburton},
  journal= {arXiv preprint arXiv:2108.04248},
  year   = {2022}
}

Comments

Main text: 6 pages, 4 figures; Supplementary Information: 17 pages, 15 figures