Related papers: Field-effect at electrical contacts to two-dimensi…
Despite metals are believed to be insensitive to field-effect and conventional Bardeen-Cooper-Schrieffer (BCS) theories predict the electric field to be ineffective on conventional superconductors, a number of gating experiments showed the…
Thermal fluctuations of a critical system induce long-ranged Casimir forces between objects that couple to the underlying field. For two dimensional (2D) conformal field theories (CFT) we derive an exact result for the Casimir interaction…
We present a fabrication method for reliably and reproducibly forming electrical contacts to 2D materials, based on the tri-layer resist system. We demonstrate the applicability of this method for epitaxial graphene on silicon carbide…
Achieving high performance in transition-metal-dichalcogenide-based optoelectronic devices is challenging -- the realization of an efficient electrical contacting scheme should not be obtained at the expense of their optical quality. Here…
Proximity effects allow for the adjustment of magnetic properties in a physically elegant way. If two thin ferromagnetic (FM) films are brought into contact, electronic coupling alters their magnetic exchange interaction at their interface.…
Semiconducting MoTe2 is one of the few two-dimensional (2D) materials with a moderate band gap, similar to silicon. However, this material remains under-explored for 2D electronics due to ambient instability and predominantly p-type Fermi…
In two-dimensional (2D) electron systems, an off-resonant high-frequency circularly polarized electromagnetic field can induce the quasi-stationary bound electron states of repulsive scatterers. As a consequence, the resonant scattering of…
In ultra-thin two-dimensional (2-D) materials, the formation of ohmic contacts with top metallic layers is a challenging task that involves different processes than in bulk-like structures. Besides the Schottky barrier height, the transfer…
A detailed comparison is presented of the temperature dependence of the conductivity of dilute, strongly interacting electrons in two-dimensional silicon inversion layers in the metallic regime in the presence and in the absence of a…
We study diffusive electron-electron interaction correction to conductivity by analyzing simultaneously $\rho_{xx}$ and $\rho_{xy}$ for disordered 2D electron systems in Si in tilted magnetic field. Tilting the field is shown to be a…
Experimental evidence for the possible universality classes of the metal-insulator transition (MIT) in two dimensions (2D) is discussed. Sufficiently strong disorder, in particular, changes the nature of the transition. Comprehensive…
Electrical field and light-illumination have been two most widely used stimuli in tuning the conductivity of semiconductor devices. Via capacitive effect electrical field modifies the carrier density of the devices, while light-illumination…
A comparative analysis of experimental data on electron transport in Si (100) MOSFETs in the region of high mobilities and strong electronelectron interaction is carried out. It is shown that electrons can be described by the model of a…
We study the effects of an external magnetic field on thensuperconducting phase diagram of a quasi-two-dimensional system of Dirac electrons at an arbitrary temperature. At zero temperature, there is a quantum phase transition connecting a…
Memory effects can have a profound impact on the resistivity of semiconductor systems, resulting in giant negative magnetoresistance and MIRO phenomena. This work opens the discussion of the memory effects in 3D conducting systems featured…
Thin organic films and two-dimensional (2D) molecular assemblies on solid surfaces yield the potential for applications in molecular electronics, optoelectronics, catalysis, and sensing. These applications rely on the intrinsic electronic…
We study the effect of laser driving on a minimal model for a hexagonal two-dimensional material with broken inversion symmetry. Through the application of circularly polarised light and coupling to a thermal free electron bath, the system…
We consider quasi-two-dimensional gas of electrons in a typical Si-MOSFET, assuming repulsive contact interaction between electrons. Magnetisation and susceptibility are evaluated within the mean-field approach. Finite thickness of the…
Two-dimensional materials offer a novel platform for the development of future quantum technologies. However, the electrical characterisation of topological insulating states, non-local resistance and bandgap tuning in atomically-thin…
Characteristic for devices based on two-dimensional materials are their low size, weight and power requirements. This makes them advantageous for use in space instrumentation, including photovoltaics, batteries, electronics, sensors and…