Related papers: Nanohole etching in AlGaSb with Ga droplets
In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire nucleation. In this work, we present three unconventional…
In this paper, the structural, electronic and magnetic properties of Zinc-blende Ga1-xVxSb compounds, with x from dilute doping situation to extreme doping limiting, were systematically investigated by first-principles calculations. V atoms…
We present a simple fabrication method for the realization of suspended GaAs nanomembranes for cavity quantum optomechanics experiments. GaAs nanomembranes with an area of 1.36 mm by 1.91 mm and a thickness of 160 nm are obtained by using a…
In printed electronics, conductive traces are often produced by printing inks of silver nanoparticles dispersed in solvents. A sintering process is usually needed to make the printed inks conductive by removing the organic dispersants and…
Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optical connections. We introduce and fabricate a novel coaxial…
The thermal conductivity and stability of nanofluids have posed the biggest challenges to their adoption as coolants in thermal applications in industries such as electronic equipment, heat exchangers, and solar technologies. In this paper,…
Epitaxial III-V semiconductor quantum dots in nanopthonic structures are promising candidates for implementing on-demand indistinguishable single-photon emission in integrated quantum photonic circuits. Quantum dot proximity to the etched…
Making use of focused Ga-ion beam (FIB) fabrication technology, the evolution with device dimension of the low-temperature electrical properties of Nb nanowires has been examined in a regime where crossover from Josephson-like to insulating…
GaSbBi alloys have recently emerged as attractive materials for mid-infrared optoelectronics owing to strong band gap reduction enabled by Bi incorporation into the GaSb matrix. The fundamental understanding of the epitaxial process…
Attaining low resistivity AlGaN layers is the keystone to improve the efficiency of light emitting devices in the ultraviolet spectral range. Here, we present a microstructural analysis of Ge-doped AlGaN samples with Al mole fraction from…
On the way to advance the sensing technology, various strategies based on the nano-materials have been introduced to improve the performance of the gas sensors. In this study, we have introduced a facile fabrication procedure for annealing…
The fabrication of functional micro- and nano-electronic devices requires the deposition of high-quality materials of different electronic material classes, such as conductors, semiconductors and insulators. To establish…
We report the measurements of the heat capacity of ^4He confined in nanoporous Gelsil glass that has nanopores of 2.5-nm diameter at pressures up to 5.3 MPa. The heat capacity has a broad peak at a temperature much higher than the…
We present a systematic experimental investigation of the reactions between hydrogen plasma and single-walled carbon nanotubes (SWNTs) at various temperatures. Microscopy, infrared (IR) and Raman spectroscopy and electrical transport…
The temperature dependence of the thermal boundary resistivity is investigated in glass-embedded Ag particles of radius 4.5 nm, in the temperature range from 300 to 70 K, using all-optical time-resolved nanocalorimetry. The present results…
Aerobreakup of fluid droplets under the influence of impulsively generated high-speed gas flow using an open-ended shock tube is studied using experiments and numerical simulations. Breakup of mm-sized droplets at high Weber number was…
We present a systematic characterization of fluctuations in submicron Hall devices based on GaAs/AlGaAs two-dimensional electron gas heterostructures at temperatures between 1.5 K to 60 K. A large variety of noise spectra, from 1/f to…
Thermal voltage noise measurements are performed in order to determine the electron temperature in nanopatterned channels of a GaAs/AlGaAs heterostructure at bath temperatures of 4.2 and 1.4 K. Two narrow two-dimensional (2D) heating…
Several semiconductor quantum dot techniques have been investigated for the generation of entangled photon pairs. Among the other techniques, droplet epitaxy enables the control of the shape, size, density, and emission wavelength of the…
GaAs quantum dots grown by droplet etching epitaxy are high-quality solid-state sources of quantum light. Despite implementation in devices that exploit quantum phenomenon, a comprehensive review on the crystal growth of quantum dots grown…