Related papers: Nanohole etching in AlGaSb with Ga droplets
We describe a technique to fabricate closely spaced electron-hole bilayers in GaAs-AlGaAs heterostructures. Our technique incorporates a novel method for making shallow contacts to a low density ($<10^{11}cm^{-2}$) 2-dimensional electron…
We investigate theoretically how cold atoms, including Bose-Einstein condensates, are scattered from, or absorbed by nanotubes with a view to analysing recent experiments. In particular we consider the role of potential strength, quantum…
We experimentally investigate the evaporation dynamics of sessile water droplets on a micro-nano textured superhydrophobic aluminum substrate at various temperatures using shadowgraphy imaging. By comparing the evaporation behavior of two…
We study the gas accretion onto a supermassive black hole (SMBH) using the 3D SPH code GADGET-3 on scales of 0.1-200 pc. First we test our code with spherically symmetric, adiabatic Bondi accretion problem. We find that our simulation can…
Nanolithography based on local oxidation with a scanning force microscope has been performed on an undoped GaAs wafer and a Ga[Al]As heterostructure with an undoped GaAs cap layer and a shallow two-dimensional electron gas. The oxide growth…
Digital alloys of GaSb/Mn have been fabricated by molecular beam epitaxy. Transmission electron micrographs showed good crystal quality with individual Mn-containing layers well resolved; no evidence of 3D MnSb precipitates was seen in…
An ion beam based dry etching method has been developed for progressive reduction of dimensions of prefabricated nanostructures. The method has been successfully applied to aluminum nanowires and aluminum single electron transistors (SET).…
The mechanism of ballas like nano crystalline diamond formation (NCD) still remains elusive, and this work attempts to analyze its formation in the framework of activation energy ($E_\text{a}$) of NCD films grown from…
The MgB2 superconductor synthesized in a flowing argon atmosphere using nanometer magnesium powder as the raw materials, denoted as Nano-MgB2, has been studied by the technique of in-situ high temperature resistance measurement (HT-RT…
The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution of generated carriers. To obtain the lateral distribution of…
The interplay between vortex guiding and the Hall effect in superconducting Nb films with periodically arranged nanogrooves is studied via four-probe measurements in standard and Hall configurations and accompanying theoretical modeling.…
The pinning of the contact line adversely influences the electrowetting performance of sessile liquid droplets. In this paper, we report the electrowetting hysteresis characteristics of 100 mM aq. KCl sessile liquid droplet placed on a…
Bi-containing III-V semiconductors constitute an exciting class of metastable compounds with wide-ranging potential optoelectronic and electronic applications. However, the growth of III-V-Bi alloys requires group-III-rich growth…
Ultrathin GaN nanowires (NWs) are attractive to maximize surface effects and as building block in high-frequency transistors. Here, we introduce a facile route for the top-down fabrication of ordered arrays of GaN NWs with aspect ratios…
The polarization discontinuity across interfaces in polar nitride-based heterostructures can lead to the formation of two-dimensional electron and hole gases. In the past, the observation of these electron and hole gases has been achieved…
We demonstrate a high electron conductivity (> 10^2 S/cm and up to 10^3 S/cm) of tungsten suboxide W18O(52.4-52.9)(or equivalently WO(2.91-2.94)) nanotubes (2 to 3 nm in diameter, ca. micrometer long). The conductivity is measured in the…
Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and…
This work studies the spontaneous self-assembly of Ge QDs on AlAs, GaAs, and AlGaAs by high temperature in-situ annealing in molecular beam epitaxy (MBE). The morphology of Ge dots formed on AlAs are observed by atom probe tomography, which…
Two-dimensional electron and hole gas systems, enabled through band structure design and epitaxial growth on planar substrates, have served as key platforms for fundamental condensed matter research and high performance devices. The…
Typically, utilization of small nanopipettes results in either high sensitivity or spatial resolution in modern nanoscience and nanotechnology. However, filling a nanopipette with a sub-10-nm pore diameter remains a significant challenge.…