Related papers: Nanohole etching in AlGaSb with Ga droplets
We propose two coupled electron-hole sheets of few-layer graphene as a new nanostructure to observe superfluidity at enhanced densities and enhanced transition temperatures. For ABC stacked few-layer graphene we show that the strongly…
In this work, we studied the wetting behavior of impinged and stagnant supercooled water nanodroplet at the atomistic scale using molecular dynamics simulations. We show that water droplet represents a retraction behavior from surface…
Evaporation of water droplets on a superhydrophobic substrate, on which the contact line is pinned, is investigated. While previous studies mainly focused on droplets with contact angles smaller than 90^\circ, here we analyze almost the…
In-situ transmission electron microscopy (TEM) has become an important technique to study dynamic processes at highest spatial resolution and one branch is the investigation of phenomena related with electrical currents. Here, we present…
Assuming only statistical mechanics and general relativity, we calculate the maximal temperature of gas of particles placed in AdS space-time. If two particles with a given center of mass energy come close enough, according to classical…
In-situ etching using Ga flux in an ultra-high vacuum environment like MBE is introduced as a method to make high aspect ratio 3 dimensional structures in $\beta$-Ga2O3. Etching of $\beta$-Ga2O3 due to excess Ga adatoms on the epilayer…
GaSb:N displays promise towards realization of optoelectronic devices accessing the mid-infrared wavelength regime. Theoretical and experimental results on its electronic and optical properties are however few. To address this, we present a…
The influence of temperature on the deformation behaviour of the C15 CaAl$_2$ Laves phase, a key constituent for enhancing the mechanical properties of Mg alloys up to service temperatures of 200 {\deg}C, remains largely unexplored. This…
The theory of the interaction of electrons with acoustic phonons in multilayer nitride-based AlN/GaN nanostructures was developed for the first time at $T\geqslant 0$ using the method of finite-temperature Green's functions and Dyson…
Nanoscale potential wells provide a powerful means to engineer energy landscapes in low dimensional materials, enabling control over quantum states, carrier dynamics, and optoelectronic responses. Such confinement governs phenomena…
We obtain an exact solution of $AdS$ black hole solution in Einstein-Gauss-Bonnet (EGB) gravity coupled with nonlinear electrodynamics. It interpolates with the $AdS$ regular black hole and $AdS$ EGB black hole in the absence of the…
GaAs nanowires and GaAs-Fe3Si core-shell nanowire structures were grown by molecular-beam epitaxy on oxidized Si(111) substrates and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). Ga droplets were…
Fabrication of porous GaN distributed Bragg reflectors (DBRs) via the selective electrochemical etching (ECE) of conductive Si-doped layers, separated by non-intentionally doped (NID) layers, provides a straightforward methodology for…
Detailed temperature dependence of both superconducting gaps was obtained directly by means of SnS-Andreev spectroscopy. The \Delta \sigma,\pi(T) -curves were shown to be deviated from standard BCS-like behavior, due to k-space proximity…
The ability to control the morphology of the nanotube deposit formed during the evaporation of a sessile droplet on a substrate is of theoretical and practical interest. Such deposits are required for various applications including…
A nano-fabrication technique is presented which enables the fabrication of highly tunable devices on p-type, C-doped GaAs/AlGaAs heterostructures containing shallow two-dimensional hole systems. The high tunability of these structures is…
The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose, the epitaxy process is scaled to full two inch substrates…
Nb films containing extended arrays of holes with 45-nm diameter and 100-nm spacing have been fabricated using anodized aluminum oxide (AAO) as substrate. Pronounced matching effects in the magnetization and Little-Parks oscillations of the…
We numerically and experimentally investigate evaporation of a sessile droplet on a heated substrate. We develop a finite element (FE) model in two-dimensional axisymmetric coordinates to solve coupled transport of heat in the droplet and…
GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly-confined 0D and…