Related papers: Room-temperature colossal magnetoresistance in ter…
We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from $T$ = 1.7 K up to room temperature.…
In spite of 40 years of experimental studies and several theoretical proposals, an overall interpretation of the complex behavior of the magnetoresistance (MR) of multilayer graphene, i.e. graphite, at high fields ($B \lesssim 70~$T) and in…
We study theoretically magnetoresistance (MR) of graphene with different types of disorder. For short-range disorder, the key parameter determining magnetotransport properties---a product of the cyclotron frequency and scattering…
We report on the discovery of a large, room temperature magnetoresistance (MR) effect in polyfluorene sandwich devices in weak magnetic fields. We characterize this effect and discuss its dependence on voltage, temperature, film thickness,…
A clear gate voltage tunable weak antilocalization and a giant magnetoresistance of 400 percent are observed at 1.9 K in single layer graphene with an out-of-plane field. A large magnetoresistance value of 275 percent is obtained even at…
We show a large magnetoresistance(MR) effect in a graphene heterostructure consisting of an metallic(M) and semiconductor(SC)-type armchair-graphene-nanoribbon(aGNR). In the heterostructure, the transmission across the first subband of the…
We predict and demonstrate that a disorder induced carrier density inhomogeneity causes magnetoresistance (MR) in a two-dimensional electron system. Our experiments on graphene show a quadratic MR persisting far from the charge neutrality…
Colossal magnetoresistance (CMR) is highly applicable in spintronic devices such as magnetic sensors, magnetic memory, and hard drives. Typically, CMR is found in Weyl semimetals characterized by perfect electron-hole symmetry or…
We report a proof-of-concept study of extraordinary magnetoresistance (EMR) in devices of monolayer graphene encapsulated in hexagonal boron nitride, having metallic edge contacts and a central metal shunt. Extremely large EMR values,…
We studied daisy-chained extraordinary magnetoresistance (EMR) devices based on high quality monolayer graphene encapsulated in hexagonal boron nitride (h-BN) at room temperature. The largest magnetoresistance (MR) achieved in our devices…
Strong magnetoresistance effects are often observed in ferromagnet-nonmagnet multilayers, which are exploited in state-of-the-art magnetic field sensing and data storage technologies. In this work we report a novel…
Graphene is a model system for the study of electrons confined to a strictly two-dimensional layer1 and a large number of electronic phenomena have been demonstrated in graphene, from the fractional2, 3 quantum Hall effect to…
Single-phase multiferroic materials are usually considered useless because of the weak magnetoelectric effects, low operating temperature, and small electric polarization induced by magnetic orders. As a result, current studies on…
Understanding magnetoresistance, the change in electrical resistance upon an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials…
Graphene is a powerful playground for studying a plethora of quantum phenomena. One of the remarkable properties of graphene arises when it is strained in particular geometries and the electrons behave as if they were under the influence of…
A lot of efforts have been devoted to understanding the origin and effects of magnetic moments induced in graphene with carbon atom vacancy, or light adatoms like hydrogen or fluorine. At the meantime, the large negative magnetoresistance…
We have grown La$_{1.37}$Sr$_{1.63}$Mn$_2$O$_7$ single crystals with a laser-diode-heated floating-zone furnace and studied the crystallinity, structure, and magnetoresistance (MR) effect by in-house X-ray Laue diffraction, X-ray powder…
Magnetoresistance (MR) of ion irradiated monolayer graphene samples with variable-range hopping (VRH) mechanism of conductivity was measured at temperatures down to $T = 1.8$ K in magnetic fields up to $B = 8$ T. It was observed that in…
Magnetoresistance and Hall coefficient of a graphene layer are investigated in the presence of a tilted magnetic field. We consider the graphene layer is assembled by either another graphene layer or a two-dimensional electron gas (2DEG)…
A large magnetoresistance effect is obtained at room-temperature by using p-i-n armchair-graphene-nanoribbon (GNR) heterostructures. The key advantage is the virtual elimination of thermal currents due to the presence of band gaps in the…