We report a proof-of-concept study of extraordinary magnetoresistance (EMR) in devices of monolayer graphene encapsulated in hexagonal boron nitride, having metallic edge contacts and a central metal shunt. Extremely large EMR values, MR=(R(B)−R0)/R0∼105, are achieved in part because R0 approaches or crosses zero as a function of the gate voltage, exceeding that achieved in high mobility bulk semiconductor devices. We highlight the sensitivity, dR/dB, which in two-terminal measurements is the highest yet reported for EMR devices, and in particular exceeds prior results in graphene-based devices by a factor of 20. An asymmetry in the zero-field transport is traced to the presence of pn-junctions at the graphene-metal shunt interface.
@article{arxiv.2002.01123,
title = {Extraordinary magnetoresistance in encapsulated monolayer graphene devices},
author = {Bowen Zhou and Kenji Watanabe and Takashi Taniguchi and Erik A. Henriksen},
journal= {arXiv preprint arXiv:2002.01123},
year = {2020}
}