Related papers: Two-dimensional Cold Electron Transport for Steep-…
Three-dimensional (3D) topological Dirac semimetal is a new kind of material that has a linear energy dispersion in 3D momentum space and can be viewed as an analog of graphene. Extensive efforts have been devoted to the understanding of…
The contact issue for two-dimensional (2D) materials-based field-effect transistors (FETs) has drawn enormous attention in recent years. Although ohmic behavior is achieved at room temperature, the drain current of 2DFETs shifts from ohmic…
Graphene-like two-dimensional (2D) materials, not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also, hold promises for device miniaturization down to atomic…
We show how strongly interacting two-dimensional Dirac fermions can be realized with ultracold atoms in a two-dimensional optical square lattice with an experimentally realistic, inherent gauge field, which breaks time-reversal and…
We report the transport properties of mechanically exfoliated few-layer SnSe$_{2}$ flakes, whose mobility is found with four probe measurements to be ~ 85 cm$^{2}$V$^{-1}$s$^{-1}$ at 300 K, higher than those of the majority of few-layer…
To realize ferromagnetic semiconductors with high Curie temperature TC is still a challenge in spintronics. Recent experiments have obtained two-dimensional (2D) room temperature ferromagnetic metals, such as monolayers MnSe2 and Cr3Te6. In…
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…
We experimentally investigate the effect of electron temperature on transport in the two-dimensional Dirac surface states of the three-dimensional topological insulator HgTe. We find that around the minimal conductivity point, where both…
An increase in power consumption necessitates a low-power circuit technology to extend Moore's law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and…
The material termed three-dimensional (3D) Dirac semimetal has attracted great interests recently, since it is an electronic analogue to two-dimensional graphene. Starting from this novel phase, various topologically distinct phases may be…
The close approach of the Fermi energy EF of a Dirac semimetal to the Dirac point ED uncovers new physics such as velocity renormalization,1,2,3 and the Dirac plasma 4,5 at |EF -ED| < kBT, where kBT is the thermal energy. In graphene,…
A two-dimensional (2D) electron gas formed in a modulation-doped GaAs/AlGaAs single quantum well undergoes a first-order transition when the first excited subband is occupied with electrons, as the Fermi level is tuned into resonance with…
The cold source field-effect transistor (CSFET) is promising for reducing power dissipation in integrated circuits by engineering the density of states at the injecting source. Existing CSFET designs utilizing Dirac-source metals or…
At low energy, electrons in doped graphene sheets behave like massless Dirac fermions with a Fermi velocity which does not depend on carrier density. Here we show that modulating a two-dimensional electron gas with a long-wavelength…
Two-dimensional (2D) materials have shown great potential in applications as transistors, where thermal dissipation becomes crucial because of the increasing energy density. Although thermal conductivity of 2D materials has been extensively…
The nodal-line semimetals have attracted immense interest due to the unique electronic structures such as the linear dispersion and the vanishing density of states as the Fermi energy approaching the nodes. Here, we report…
The advancement of nanoscale electronics has been limited by energy dissipation challenges for over a decade. Such limitations could be particularly severe for two-dimensional (2D) semiconductors integrated with flexible substrates or…
A theory of hot electron cooling power due to polar optical phonons $P_{\rm op}$ is developed in three-dimensional Dirac semimetal($3$DDS) Cd$_3$As$_2$ taking account of hot phonon effect. Hot phonon distribution $N_q$ and $P_{\rm op}$ are…
Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-quality, ultrathin high-\k{appa} dielectrics that fully meet…
We present low temperature electrical transport experiments in five field effect transistor devices consisting of monolayer, bilayer and trilayer MoS2 films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal that the…