Related papers: Reduced lasing thresholds in GeSn microdisk caviti…
We study the SLACS strong lensing system SDSSJ1430+4105 at z=0.285. The lensed source (z=0.575) of this system has a complex morphology with several subcomponents. Its subcomponents span a radial range from 4 to 10kpc in the lens plane.…
High resolution mid-infrared spectra are presented for 155 nuclear and extranuclear regions from the Spitzer Infrared Nearby Galaxies Survey (SINGS). The fluxes for nine atomic forbidden and three molecular hydrogen mid-infrared emission…
The recently developed precession electron diffraction (PED) technique in scanning transmission electron microscopy (STEM) has been used to elucidate the local strain distribution and crystalline misorientation in CMOS fabricated strained…
To reduce the prominent VOC-deficit that limits kesterite-based solar cells efficiencies, Ge has been proposed over the recent years with encouraging results, as the reduction of the non-radiative recombination rate is considered as a way…
Identifying the source population of ionizing radiation, responsible for the reionization of the universe, is currently a hotly debated subject with conflicting results. Studies of faint, high-redshift star-forming galaxies, in most cases,…
In the past few years, the need of measuring accurately the spatial and temporal coordinates of the particles generated in high-energy physics experiments has spurred a strong R\&D in the field of silicon sensors. Within these research…
Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN…
Coherent combination of emission power from an array of coupled semiconductor lasers operating on the same chip is of fundamental and technological importance. In general, the nonlinear competition among the array supermodes can entail…
The lasing operation of a ZnO planar microcavity under optical pumping is demonstrated from T=80 K to 300 K. At the laser threshold, the cavity switches from the strong coupling to the weak coupling regime. A gain-related transition, which…
Whispering gallery modes in GaAs disk resonators reach half a million of optical quality factor. These high Qs remain still well below the ultimate design limit set by bending losses. Here we investigate the origin of residual optical…
We report room temperature lasing in two-dimensional diffractive lattices of silver and gold plasmon particle arrays embedded in a dye-doped polymer that acts both as waveguide and gain medium. As compared to conventional dielectric…
The direct growth of III-V semiconductors on silicon holds tremendous potential for photonics applications. However, the inherent differences in their properties lead to defects in the epitaxial layer, including threading dislocations…
We show that GdN nanoislands can enhance inter-band tunneling in GaN PN junctions by several orders of magnitude, enabling low optical absorption low-resistance tunnel junctions (specific resistivity 1.3 X 10-3 {\Omega}-cm2) for various…
Ultraviolet nanosecond laser annealing (UV-NLA) proves to be an important technique, particularly when tightly controlled heating and melting are necessary. In the realm of semiconductor technologies, the significance of nanosecond laser…
By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An…
We have conducted a high-resolution spectroscopic study using Spitzer of 18 bulgeless (Sd/Sdm) galaxies that show no definitive signatures of nuclear activity in their optical spectra. This is the first systematic mid-IR search for weak or…
The ultimate feature size is key in ultrafast laser material processing. A capacity to signiicantly exceed optical limits and to structure below 100nm is essential to advance ultrafast processing into the field of metamaterials. Such…
Lasers that operate in the visible wavelength range and can be easily integrated on a chip together with photonic integrated circuits are of particular interest for biophotonic applications. We present a new class of laser sources that emit…
Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by…
We present germanium microdisk optical resonators under a large biaxial tensile strain using a CMOS-compatible fabrication process. Biaxial tensile strain of ~0.7% is achieved by means of a stress concentration technique that allows the…