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Previous work on additively-manufactured oxide dispersion strengthened alloys focused on experimental approaches, resulting in larger dispersoid sizes and lower number densities than can be achieved with conventional powder metallurgy. To…
Soft-X-ray emission and absorption spectroscopies with their elemental specificity are used to determine the local electronic structure of N atoms in Ga(In)AsN diluted semiconductor alloys (N concentrations about 3%) in view of applications…
Laser science has tackled physical limitations to achieve higher power, faster and smaller light sources. The quest for ultra-compact laser that can directly generate coherent optical fields at the nano-scale, far beyond the diffraction…
Laser cutting of semiconductor wafers and transparent dielectrics has become a dominant process in manufacturing industries, encompassing a wide range of applications from flat display panels to microelectronic chips. Limited by the…
A silicon-compatible light source is the final missing piece for completing high-speed, low-power on-chip optical interconnects. In this paper, we present a germanium-based light emitter that encompasses all the aspects of potential…
Engineering light absorption in the extended short-wave infrared (e-SWIR) range using scalable materials is a long-sought-after capability that is crucial to implement cost-effective and high-performance sensing and imaging technologies.…
Optical materials with vanishing dielectric permittivity, known as epsilon-near-zero (ENZ) materials, have been shown to possess enhanced nonlinear optical responses in their ENZ region. These strong nonlinear optical properties have been…
Nanowires (NWs) with a unique one-dimensional structure can monolithically integrate high-quality III-V semiconductors onto Si platform, which is highly promising to build lasers for Si photonics. However, the lasing from…
Ge$_{1-x}$Sn$_{x}$ alloys are a promising candidate material to realise direct-gap group-IV semiconductors for applications in Si-compatible electronic and photonic devices. Here, we present a combined theoretical and experimental analysis…
ZnO/GaN alloys exhibit exceptional photocatalyst applications owing to the flexibly tunable band gaps that cover a wide range of the solar spectrum, and thus have attracted extensive attentions over the past few years. In this study,…
We have analysed a large data set of OVI absorber candidates found in the spectra of 3702 SDSS quasars, focusing on a subsample of 387 AGN sightlines with an average S/N>5.0, allowing for detection of absorbers above rest-frame equivalents…
We report Herschel Spitzer and Wise observations of 44 z=4.8 optically selected active galactic nuclei (AGNs). This sample contains the highest mass black holes (BHs) at this redshift. Ten of the objects were detected by Herschel and five…
We present a combined experimental and theoretical analysis of the evolution of the near-band gap electronic and optical properties of Si$_{x}$Ge$_{1-x-y}$Sn$_{y}$ alloys lattice-matched to Ge and GaAs substrates. We perform…
This paper reports on the quasi-three-level continuous wave laser operation based on waveguide structures in neodymium doped calcium niobium gallium garnet disordered crystal. Laser wavelength selection through the waveguide cross section…
We characterize germanium-vacancy GeVn complexes in silicon using first-principles Density Functional Theory calculations with screening-dependent hybrid functionals. We report on the local geometry and electronic excited states of these…
We present weak lensing shear catalogues from the fourth data release of the Kilo-Degree Survey, KiDS-1000, spanning 1006 square degrees of deep and high-resolution imaging. Our `gold-sample' of galaxies, with well-calibrated photometric…
We present the results of a systematic analysis of Fe K emission lines in low-luminosity AGNs (LLAGNs) observed with ASCA. We used a sample of LLAGNs with small intrinsic absorption to compare with luminous AGNs and accretion models. Some…
Nanowire lasers are sought for near-field and on-chip photonic applications as they provide integrable, coherent and monochromatic radiation. A wavelength-scale nanowire acts as both the gain medium and the cavity for the lasing action: the…
The impact of femtosecond (fs) laser radiation on semiconductors with direct (ZnSe, GaAs, CdZnTe) band gap, with the structurally induced direct-to-indirect band gap transition (PbI2, GaSe) and indirect band gap (Si) has been studied. The…
Raman light scattering, low-temperature photoluminescence, light-scattering tomography, and hydrogenation were used to investigate optical properties of defects in strain-relaxed Si_{1-x}Ge_x (0.05 \le x \le 0.50) alloys. The…