Related papers: Reduced lasing thresholds in GeSn microdisk caviti…
$\rm{Ge}_{1-x-y}Si_{x}Sn_{y}$ alloys were grown on Ge buffer layers at ultra-low temperature using reactions of $\rm SnH_{4}$ and $\rm GeH_{3}Cl$ for the first time. The latter is a newly introduced CVD source designed for epitaxial…
Miniature semiconductor lasers have attracted a large amount of interest owing to their potential as highly integrated components in photonic circuits or in sensors. Particularly, microdisk lasers exploiting whispering gallery modes have…
Orthorhombic-structured II-IV nitrides provide a promising opportunity to expand the material platform while maintaining compatibility with the wurtzite crystal structure of the traditional III-nitride material system. Among them,…
Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer. The photonic circuits consist of a microdisk and a pulley…
On-chip light sources are critical for the realization of fully integrated photonic circuitry. So far, semiconductor miniaturized lasers have been mainly limited to sizes on the order of a few microns. Further reduction of sizes is…
GeSn has emerged as a promising material for spintronics due to its long spin-lifetime, compatibility with silicon technology, high mobility and tunable electronic properties. Of particular interest is the transition from an indirect to a…
Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly…
Efficiency droop, i.e., a decline in brightness of LEDs at high electrical currents, has limited the performance of all commercially available LEDs. Until now, it has limited the output power of sub-micron LEDs and lasers to nanowatt range.…
Directional lasing, with a low threshold and high quality factor, in active dielectric nanoantenna arrays is demonstrated. This is achieved through a leaky resonance excited in coupled gallium arsenide (GaAs) nanopillars. The leaky…
We study laser generation in 1D distributed feedback lasers with amplifying and lossy layers. We show that when the lasing frequency differs from the transition frequencies of the amplifying medium, loss induced lasing may occur due to the…
Nb3Sn is a promising next-generation material for superconducting radiofrequency cavities, with significant potential for both large scale and compact accelerator applications. However, so far, Nb3Sn cavities have been limited to cw…
Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 in photonic areas, with…
We present an interband cascade laser (ICL) emitting at 5.2 {\mu}m consisting of an 8-stage active region and a hybrid cladding composed of outer plasmon-enhanced InAs_0.915 Sb_0.085 and inner InAs/AlSb superlattice claddings. The hybrid…
We present new results of our program to systematically search for strongly lensed galaxies in the Sloan Digital Sky Survey (SDSS) imaging data. In this study six strong lens systems are presented which we have confirmed with follow-up…
The monolithic integration of extended short-wave infrared (e-SWIR) photodetectors (PDs) on silicon is highly sought-after to implement manufacturable, cost-effective sensing and imaging technologies. With this perspective, GeSn PIN PDs…
In this work, the optoelectronic characteristics of kesterites of the Cu2NiXS4 system (X = Si, Ge, Sn) were studied. The electronic properties of the Cu2NiXS4 (X = Si, Ge, Sn) system were studied using first-principles calculations within…
GaSb:N displays promise towards realization of optoelectronic devices accessing the mid-infrared wavelength regime. Theoretical and experimental results on its electronic and optical properties are however few. To address this, we present a…
Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in LED performance due to improved injection efficiency. Here,…
The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose, the epitaxy process is scaled to full two inch substrates…
We report lasing from a lithographically defined buried heterostructure with an estimated lateral footprint of (107 nm)^2, embedded in an InP photonic-crystal nanobeam cavity. This represents the smallest laterally confined buried…