Related papers: A current-voltage model for double Schottky barrie…
A theory for the voltage-current characteristic in high TC DC SQUIDs, which accounts for a second harmonic in the junction current-phase relation, is developed. The comparison with experiment is performed. It is shown that if the second…
We study the effect of local strain in the electronic transport properties of vertical metal-atomically thin MoS2-metal structures. We use a conductive atomic force microscope tip to apply different load forces to monolayer and few-layer…
We propose a model to explore the dynamics of spin-systems coupled by exchange interaction to the conduction band electrons of a semiconductor material that forms the channel in a ferromagnet/semiconductor/ferromagnet spin-valve structure.…
The W/Si(001) Schottky barrier height is mapped to nanoscale dimensions using BEEM over a period of 21 days to observe changes in the interface electrostatics. Initially the average spectrum is fit to a Schottky barrier height of 0.71 eV…
An unusual electron transfer phenomenon has been identified from an n-type semiconductor to Schottky metal particles, the result of a unique metal semiconductor interface that results when the metal particles are grown from the…
We develop a phase-space ab-initio formalism to compute Ballistic Electron Emission Spectroscopy current-voltage I(V)'s in a metal-semiconductor interface. We consider injection of electrons into the conduction band for direct bias ($V>0$)…
We present theoretical and experimental studies of Schottky diodes that use aligned arrays of single walled carbon nanotubes. A simple physical model, taking into account the basic physics of current rectification, can adequately describe…
Phosphorene is a unique single elemental semiconductor with two-dimensional layered structures. In this letter, we study the transistor behavior on mechanically exfoliated few-layer phosphorene with the top-gate. We achieve a high…
Traditionally, Schottky diodes are used statically in the electronic information industry but dynamic state Schottky diodes based applications have been rarely explored. Herein, a novel Schottky diode named moving Schottky diode generator…
In this letter, we present a kilovolt-class \b{eta}-Ga2O3 vertical trench Schottky barrier diode with a field plate incorporating narrow fin width (Wfin) structures of sub-micron dimensions. We used a nanolaminate dielectric comprising a…
Schottky contacts (SC) at the ferromagnet/ZnO interface are good candidates for the realization and control of several semiconductor emerging magnetic phenomena such spin injection and spin-controlled photonics. In this work, we demonstrate…
Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS${_2}$)-FETs, have gained significant attention for their potential for ultra-short channels, thereby extending Moore's law. However,…
We present a scaling analysis of electronic and transport properties of metal-semiconducting carbon nanotube interfaces as a function of the nanotube length within the coherent transport regime, which takes fully into account atomic-scale…
We have studied the electronic structure of the interface between 6H-SiC{0001} and graphite. On n-type and p-type 6H-SiC(0001) we observe Schottky barriers of Phi_b,n^Si= 0.3+-0.1eV and Phi_b,p^Si=2.7+-0.1eV, respectively. The observed…
The standard equations for semiconductor device analysis were solved by specifying the electron and hole current injected at a small contact, assuming high-level injection. Calculated current-voltage characteristics were fit to measurements…
We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and…
Graphene-Silicon Schottky diode photodetectors possess beneficial properties such as high responsivities and detectivities, broad spectral wavelength operation and high operating speeds. Various routes and architectures have been employed…
New model of the pinning potential barrier in multi-layered HTc superconductors has been presented, basing on geometrical approach to the capturing interaction of pancake type vortices with nano-scale defects. Using this model the transport…
We propose a superconducting diode device comprising a central superconducting film flanked by two wires carrying an applied DC bias, suitably chosen so as to generate different asymmetric field profiles. Through numerical simulations of…
The remarkable electrical and optical properties or single-walled carbon nanotubes (SWNT) allowed for engineering device prototypes showing great potential for applications such as photodectors and solar cells. However, any path towards…