Related papers: Pulse-width and Temperature Dependence of Memristi…
This study reports the magnetization switching induced by spin-orbit torque (SOT) from the spin current generated in Co2MnGa magnetic Weyl semimetal (WSM) thin films. We deposited epitaxial Co2MnGa thin films with highly B2-ordered…
We have studied the underlayer thickness and temperature dependences of the current induced effective field in CoFeB|MgO heterostructures with Ta based underlayers. The underlayer thickness at which the effective field saturates is found to…
The technique of conventional ferromagnet/heavy-metal spin-orbit torque (SOT) offers significant potential for enhancing the efficiency of magnetic memories. However, it faces fundamental physical limitations, including hunting effects from…
The use of current-generated spin-orbit torques[1] to drive magnetization dynamics is under investigation to enable a new generation of non-volatile, low-power magnetic memory. Previous research has focused on spin-orbit torques generated…
Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is an attractive alternative to current random access memory technologies due to its non-volatility, fast operation and high endurance. STT-MRAM does though have…
We investigate the influence of magnons on the temperature-dependence and the anisotropy of the spin-orbit torque (SOT). For this purpose we use 3rd order perturbation theory in the framework of the Keldysh formalism in order to derive…
The role of spin fluctuations near magnetic phase transitions is crucial for generating various exotic phenomena, including anomalies in the extraordinary Hall effect, excess spin-current generation through the spin-Hall effect (SHE), and…
Recent discovery of emergent magnetism in van der Waals magnetic materials (vdWMM) has broadened the material space for developing spintronic devices for energy-efficient computation. While there has been appreciable progress in vdWMM…
The temperature dependence of the Mott metal-insulator transition (MIT) is studied with a VO_2-based two-terminal device. When a constant voltage is applied to the device, an abrupt current jump is observed with temperature. With increasing…
We discuss the effect of mode transitions on the current (I) and temperature (T) dependent linewidth (\Delta f) in nanocontact based spin torque oscillators (STOs). At constant I, \Delta f exhibits an anomalous temperature dependence near…
Spintronic devices, such as non-volatile magnetic random access memories and logic devices, have attracted considerable attention as potential candidates for future high efficient data storage and computing technology. In a heavy metal or…
Using first principles calculations, we systematically study the elastic stiffness constants, mechanical properties, elastic wave velocities, Debye temperature, melting temperature, and specific heat of several thermodynamically stable…
Intensive studies have been made on antiferromagnets as candidate materials for next generation memory bits due to their ultrafast dynamics reaching picosecond time scales. Recent demonstrations of electrical bidirectional switching of…
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…
Spin-orbit torque (SOT) magnetoresistance (MR) devices have attracted attention for use in next-generation MR devices. The SOT devices are known to exhibit different write properties based on the relative angle between the magnetization…
We measured the spin-orbit torques (SOTs), current-induced switching, and domain wall (DW) motion in synthetic ferrimagnets consisting of Co/Tb layers with differing stacking order grown on a Pt underlayer. We find that the SOTs, magnetic…
We report a systematic study of current-induced perpendicular magnetization switching in W/Co$_{x}$Tb$_{1-x}$/Al thin films with strong perpendicular magnetic anisotropy. Various Co$_{x}$Tb$_{1-x}$ ferrimagnetic alloys with different…
Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque field effect transistor (SOTFET) is a proposed device that…
Deterministic current-induced spin-orbit torque (SOT) switching of magnetization in a heavy transition metal/ferromagnetic metal/oxide magnetic heterostructure with the ferromagnetic layer being perpendicularly-magnetized typically requires…
Complex ferromagnetic oxides such as La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) offer pathways for creating energy efficient spintronic devices with new functionalities. LSMO exhibits high-temperature ferromagnetism, half metallicity, sharp…