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The realization of a semiconductor near-unity absorber in the infrared will provide new capabilities to transform applications in sensing, health, imaging, and quantum information science, especially where portability is required.…
Superconducting nanowire single-photon detector (SNSPD) with near-unity system efficiency is a key enabling, but still elusive technology for numerous quantum fundamental theory verifications and quantum information applications. The key…
We investigate the growth conditions for thin (less than 200 nm) sputtered aluminum (Al) films. These coatings are needed for various applications, e.g. for advanced manufacturing processes in the aerospace industry or for nanostructures…
Electrons in image-potential states on the surface of bulk helium represent a unique model system of a two-dimensional electron gas. Here, we investigate their properties in the extreme case of reduced film thickness: a monolayer of helium…
Superconducting nanowires used in single-photon detectors have been realized on amorphous or poly-crystalline films. Here, we report the use of single-crystalline NbN thin films for superconducting nanowire single-photon detectors (SNSPDs).…
Controlling light emission at the nanoscale has important applications in solid-state lighting, displays, and quantum light sources. Achieving this control requires both enhanced local electromagnetic fields to boost emission intensity and…
We investigate the optoelectronic properties of single indium arsenide nanowires, which are grown vertically on p-doped silicon substrates. We apply a scanning photocurrent microscopy to study the optoelectronic properties of the single…
The detection of individual quanta of light is important for quantum computation, fluorescence lifetime imaging, single-molecule detection, remote sensing, correlation spectroscopy, and more. Thanks to their broadband operation, high…
We investigated the mechanism for photoconduction in multi-walled carbon nanotube (MWNT) film of various electrode separations upon near infrared illumination. In addition to observing strong dependence of photocurrent on the position of…
We describe a micromachining process to allow the coupling of an array of single-mode telecommunication fibers to individual superconducting nanowire single photon detectors (SNSPDs). As proof of principle, we show the integration of four…
We have experimentally compared the critical current, dark count rate and photo-response of 100nm wide superconducting nanowires with different bend designs. Enhanced critical current for nanowires with optimally rounded bends, and thus…
We report an optical study of the dynamics of photoexcited carriers in Si2Te3 nanowires at various temperatures and excitation powers. Si2Te3 nanowires were synthesized, by using gold as a catalyst, on a silicon substrate by the chemical…
Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic…
Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier-transportation barriers, and foreign impurities (Au) with deep-energy levels can form carrier traps and non-radiative recombination centers. Here,…
Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their…
Fast surface integral equation (SIE) solvers seem to be ideal approaches for simulating 3-D nanophotonic devices, as these devices generate fields both in an interior channel and in the infinite exterior domain. However, many devices of…
GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Doping the GaN nanodisk insertions with Ge can reduce these PL decay times by two orders of…
Solar cells with a heterojunction between colloidal CuInS$_2$ and ZnO nanocrystals are an innovative concept in solution-processed photovoltaics, but the conversion efficiency cannot compete yet with devices employing lead chalcogenide…
The optoelectronic properties of atomically thin transition-metal dichalcogenides are strongly correlated with the presence of defects in the materials, which are not necessarily detrimental for certain applications. For instance, defects…
The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in…