Related papers: Explicit Gain Equations for Single Crystalline Pho…
Photo-gated transistors based on dye-sensitized nanocrystalline titanium dioxide thin film are established. A transistor-like transport behavior characterized by the linear increase, saturated plateau, and breakdown-like increase in the…
We perform scanning photocurrent microscopy on WS2 ionic liquid-gated field effect transistors exhibiting high-quality ambipolar transport. By properly biasing the gate electrode we can invert the sign of the photocurrent showing that the…
The separation of hot carriers in semiconductors is of interest for applications such as thermovoltaic photodetection and third-generation photovoltaics. Semiconductor nanowires offer several potential advantages for effective hot-carrier…
Graphene is an attractive material for broadband photodetection but suffers from weak light absorption. Coating graphene with quantum dots can significantly enhance light absorption and create extraordinarily high photo gain. This high gain…
We present an approach to increase the effective light-receiving area of superconducting nanowire single-photon detectors (SNSPD) by means of free-form microlenses that are printed in situ on top of the sensitive detector area using…
We demonstrate on-chip generation of indistinguishable photons based on a nanowire quantum dot. From a growth substrate containing arrays of positioned-controlled single dot nanowires, we select a single nanowire which is placed on a SiN…
Semiconducting diode with nonreciprocal transport effect underlies the cornerstone of contemporary integrated circuits (ICs) technology. Due to isotropic superconducting properties and the lack of breaking of inversion symmetry for…
Superconducting nanowire single photon detectors are capable of single-photon detection across a large spectral range, with near unity detection efficiency, picosecond timing jitter, and sub-10 $\mu$m position resolution at rates as high as…
Solar cells have generated a lot of interest as a potential source of clean renewable energy for the future. However a big bottleneck in wide scale deployment of these energy sources remain the low efficiency of these conversion devices.…
We show that avoiding bends in a current-carrying superconducting nanowire enhances the probability for low energy photons to be detected and that this enhancement is entirely due to the increase in the experimentally achievable critical…
Silicon nanowires are prepared by the method of the two-step metal-assisted wet chemical etching. We have analyzed the structure of solid, rough and porous nanowire surfaces of boron-doped silicon substrates with resistivities of \rho >…
High refractive index semiconductor nanowires have recently been demonstrated experimentally as an efficient platform for enhancing the signal in fluorescence-based biosensors. Here, we study through modelling how a vertical GaP nanowire…
A two-dimensional model was developed to simulate the optoelectronic characteristics of indium-gallium-nitride (InGaN), thin-film, Schottky-barrier solar cells. The solar cells comprise a window, designed to reduce the reflection of…
A robust process for fabricating intrinsic single-photon emitters in silicon nitride has been recently established. These emitters show promise for quantum applications due to room-temperature operation and monolithic integration with the…
On-chip nanophotonics serves as the foundation for the new generation of information technology, but it is challenged by the diffraction limit of light. With the capabilities of confining light into (deep) subwavelength volumes, plasmonics…
Due to the unique three-dimensional (3-D) geometries of nanowire-i.e., large surface-to-volume ratios and smaller cross-sections at the nanowire-substrate interfaces-their carrier dynamics are much more complicated than those of thin films.…
Large and persistent photoconductivity (LPPC) in semiconductors is due to the trapping of photo-generated minority carriers at crystal defects. Theory has suggested that anion vacancies in II-VI semiconductors are responsible for LPPC due…
The multipole expansion has found limited applicability for optical dielectric resonators in inhomogeneous environment, such as on the surface of substrates. Here, we generalize the method of images to multipole analysis for light…
A negative kink in excess conductivity is observed in p-type non-degenerate (moderate dopant concentration) silicon wafers when excited by a very narrow pulse of 532 nm laser appearing just after the complete positive decay of dark…
Single photon emitters play a central role in many photonic quantum technologies. A promising class of single photon emitters consists of atomic color centers in wide-bandgap crystals, such as diamond silicon carbide and hexagonal boron…