Related papers: Void Engineering in Epitaxially Regrown GaAs-Based…
Re-using the substrate is identified as a method for reducing the cost of high efficiency III-V solar cells. The approach investigated here consists in inserting a graphene layer onto a (001)GaAs substrate prior to the epitaxial growth of…
Laser surface remelting can be used to manipulate the microstructure of cast material. Here, we present a detailed analysis of the microstructure of Fe$_2$VAl following laser surface remelting. Within the melt pool, elongated grains grow…
The equations providing to describe generation process in FEL with varied parameters of diffraction grating (photonic crystal) are obtained. It is shown that applying diffraction gratings (photonic crystal) with the variable period one can…
We report on the growth of axial InAs-on-GaAs nanowire heterostructures on silicon by molecular beam epitaxy using 20 nm diameter Au catalysts. First, the growth parameters of the GaAs nanowire segment were optimized to achieve a pure…
We demonstrate topological defect lasers in a GaAs membrane with embedded InAs quantum dots. By introducing a disclination to a square-lattice of elliptical air holes, we obtain spatially confined optical resonances with high quality…
Epitaxial low temperature grown GaAs (LT-GaAs) on silicon (LT-GaAs/Si) has the potential for terahertz (THz) photoconductive antenna applications. However, crystalline, optical and electrical properties of heteroepitaxial grown LT-GaAs/Si…
Strong field-confinement, long-lifetime resonances, and slow-light effects suggest that meta surfaces are a promising tool for nonlinear optical applications. These nanostructured devices have been utilized for relatively high efficiency…
We demonstrate the first optically pumped sub-300 nm UV laser structures grown by plasma-assisted molecular beam epitaxy on single-crystal bulk AlN. The edge-emitting laser structures fabricated with the AlN/AlGaN heterostructures exhibit…
Spontaneous emission, as a fundamental radiative process and a versatile information carrier, plays a vital role in light-emitting devices, optical information modulation and encryption, super-resolution fluorescence imaging. Engineering…
We present direct evidence of enhanced Ga interdiffusion in InAs free-standing nanowires grown at moderate temperatures by molecular beam epitaxy on GaAs (111)B. Scanning electron microscopy together with X-ray diffraction measurements in…
Self-assembled quantum dots based on III-V semiconductors have excellent properties for applications in quantum optics. However, the presence of a 2D wetting layer which forms during the Stranski-Krastanov growth of quantum dots can limit…
Intrinsic catalytic process by capillary condensation of Ga-atoms into nanotrenches, formed among impinging islands during the wurzite-GaN thin film deposition, is shown to be an effective path to growing GaN nanorods without metal…
GaN-based resonators supporting whispering gallery modes are suggested as a promising approach for fabrication of efficient nanophotonic applications. A modification of excitonic emission due to coupling with cavity modes is observed…
This study investigated the formation of multi-voids in polydimethylsiloxane (PDMS) using a multi-pulse irradiation method and explored the impact of laser energy, number of pulses per micron (writing speed), and laser spot size (NA) on the…
Self-assembled InAs quantum dots (QDs) grown on GaAs(001) surface by molecular beam epitaxy under continuous and growth-interruption modes exhibit two families of QDs, quasi-3D (Q3D) and 3D QDs, whose volume density evolution is…
We show that elongated nanowires can be grown on crystal surfaces by allowing large strained two-dimensional islands to desorb by varying the adatom supersaturation or chemical potential. The width of the wires formed in this process is…
The III-Se layered semiconductors, including InSe and GaSe, are promising optoelectronic materials due to their relatively high electron mobilities at room temperature, nonlinear optical responses, ferroelectricity, self-passivated van der…
In this paper we present a reliable process to fabricate GaN/AlGaN one dimensional photonic crystal (1D-PhC) microcavities with nonlinear optical properties. We used a heterostructure with a GaN layer embedded between two Distributed Bragg…
We present the direct heteroepitaxial growth of high-quality InGaAs quantum dots on silicon, enabling scalable, cost-effective quantum photonics devices compatible with CMOS technology. GaAs heterostructures are grown on silicon via a GaP…
The equations describing the VFEL lasing in case of an electron beam moving either in a split of a diffraction grating or in a vacuum waveguide containing a diffraction grating (vacuum VFEL) have been obtained. The dispersion equation…