Related papers: Silicon-based Intermediate-band Infrared Photodete…
Multilayer van der Waals (vdWs) semiconductors have great promising application in high-performance optoelectronic devices. However, the photoconductive photodetectors based on layered semiconductors often suffer from large dark current and…
We present a mid-IR ($\lambda \approx$ 8.3 $\mu$m) quantum well infrared photodetector (QWIP) fabricated on a mid-IR transparent substrate, allowing photodetection with illumination from either the front surface or through the substrate.…
Fast and accurate detection of light in the near-infrared (NIR) spectral range plays a crucial role in modern society, from alleviating speed and capacity bottlenecks in optical communications to enhancing the control and safety of…
Benefit to layer-dependent bandgap, van der Waals materials with surface photovoltaic effect (SPV) enable photodetection over a tunable wavelength range with low power consumption. However, sensitive SPV in the infrared region, especially…
While advancing a physics-based comprehensive photodetector-simulation model, we propose a novel device design of the mid-wavelength infrared nBn photodetectors by exploiting the inherit flexibility of the $InAs_{1-x}Sb_{x}$ ternary alloy…
Wide bandgap semiconductors have become the most attractive materials in optoelectronics in the last decade. Their wide bandgap and intrinsic properties have advanced the development of reliable photodetectors to selectively detect short…
Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top…
On-chip photodetectors are essential components in optical communications as they convert light into an electrical signal. Photobolometers are type of photodetector that functions through a resistance change caused by electronic temperature…
Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we exploit these attributes along with the enhanced lattice…
Al/Si photodiode were prepared by successive of deposition of Aluminum thin films on p-type Si (100) using coprecipitation method by evaporator in vacuum 2.0E-4 torr. The measured signals are attributed to a spectral response, which appears…
We propose to utilize multiple-graphene-layer structures with lateral p-i-n junctions for terahertz (THz) and infrared (IR) photodetection and substantiate the operation of photodetectors based on these structures. Using the developed…
Mid-infrared (MIR) detectors find extensive applications in chemical sensing, spectroscopy, communications, biomedical diagnosis and space explorations. Alternative to semiconductor MIR photodiodes and bolometers, mechanical-resonator-based…
Shortwave infrared (SWIR) has various applications, including night vision, remote sensing, and medical imaging. SWIR organic photodetectors (OPDs) offer advantages such as flexibility, cost-effectiveness, and tunable properties, however,…
High-speed thermal imaging in the long-wave infrared (LWIR) is critical for applications from autonomous navigation to medical screening, yet existing uncooled detectors are fundamentally constrained. Resistive bolometers are limited by…
Hybrid integration of plasmonics and Si photonics is a promising architecture for global microprocessor interconnects. To this end, practical plasmonic devices not only should provide athermal, broadband operation over wavelength-scale…
Decreasing the operation temperature of a Silicon Photo-Multiplier (SiPM) leads to a drop in its dark noise. Some experiments consider cold temperatures as an option for low noise applications of SiPM. One of those is the TAO detector,…
A mid-infrared single photon detector (MIR-SNSPD) was reported based on 30 nm-wide superconductor molybdenum silicide nanowires in this work. Saturated quantum efficiencies (QEs) were achieved at the wavelength ranging from 1.55 to 5.07…
High-resolution chemical imaging within deep tissues and intact spheroids remains a grand challenge. Here, we introduce mid-wave infrared photothermal (MWIP) microscopy operating in the underexplored 2000-2500 nm spectral window for…
We present an approach to fabrication and packaging of integrated photonic devices that utilizes waveguide and detector layers deposited at near-ambient temperature. All lithography is performed with a 365 nm i-line stepper, facilitating…
Semiconductor photonic devices operating in the midwave infrared (mid-IR, which we roughly define here as wavelengths spanning 3 to 14 microns) uniquely address a wide range of current practical needs. These include chemical sensing,…