Study of Silicon Photomultiplier Performance at Different Temperatures

N. Anfimov; D. Fedoseev; A. Rybnikov; A. Selyunin; S. Sokolov; A. Sotnikov

doi:10.1016/j.nima.2021.165162

Study of Silicon Photomultiplier Performance at Different Temperatures

Instrumentation and Detectors 2021-03-17 v1 High Energy Physics - Experiment

Authors: N. Anfimov , D. Fedoseev , A. Rybnikov , A. Selyunin , S. Sokolov , A. Sotnikov

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Abstract

Decreasing the operation temperature of a Silicon Photo-Multiplier (SiPM) leads to a drop in its dark noise. Some experiments consider cold temperatures as an option for low noise applications of SiPM. One of those is the TAO detector, which requires operation at $T\approx -50~^\circ$ C. A significant dependence of the Photon Detection Efficiency (PDE) of a SiPM on different temperatures was reported with a drastic drop around this temperature. In this paper, we present studies of performance for two samples of SiPMs from Hamamatsu and AdvanSID(FBK) companies in a broad temperature range. No significant difference for the PDE was observed.

Keywords

silicon photomultiplier temperature dependence photon detection efficiency dark noise tao detector

Cite

@article{arxiv.2005.10665,
  title  = {Study of Silicon Photomultiplier Performance at Different Temperatures},
  author = {N. Anfimov and D. Fedoseev and A. Rybnikov and A. Selyunin and S. Sokolov and A. Sotnikov},
  journal= {arXiv preprint arXiv:2005.10665},
  year   = {2021}
}

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Keywords: Silicon Photomultiplier - SiPM, Photon Detection Efficiency - PDE, Dark Count Rate - DCR, PDE temperature dependence

Study of Silicon Photomultiplier Performance at Different Temperatures

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