Related papers: Silicon-based Intermediate-band Infrared Photodete…
This paper introduces a thermal infrared detector utilizing a nano-optomechanical silicon nitride (SiN) resonator, equipped with a free-space impedance-matched (FSIM) absorber composed of a platinum (Pt) thin film, offering a broadband…
Semiconductor nanowires offer great potential for realizing broadband photodetectors that are compatible with silicon technology. However, the spectral range of such detectors has so far been limited to selected regions in the ultraviolet,…
Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their…
Detection of infrared (IR) photons in a room-temperature IR camera is carried out by a two-dimensional array of microbolometer pixels which exhibit temperature-sensitive resistivity. When IR light coming from the far-field is focused onto…
This paper reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: 1) the demonstration of a set of photoconductors with Sn compositions ranging from 10.5% to 22.3%, showing the cut-off wavelength has…
Two dimensional transition metal di-chalcogenides (TMDCs) are promising candidates for ultra-low intensity photodetection. However, the performance of these photodetectors is usually limited by ambience induced rapid performance degradation…
A phototransistor is a promising candidate as an optical power monitor in Si photonic circuits since the internal gain of photocurrent enables high sensitivity. However, state-of-the-art waveguide-coupled phototransistors suffer from a…
Single photon detection is important for a wide range of low-light applications, including quantum information processing, spectroscopy, and light detection and ranging (LiDAR). A key challenge in these applications has been to integrate…
We propose a scheme for infrared single-photon detection based on two-photon absorption at room-temperature in Si avalanche photodiodes, where the detected photon's energy is lower than the bandgap and the energy difference is complemented…
We present a compact on-chip resonator enhanced silicon-MSM photodetector in $850$ $nm$ wavelength band for communication and lab-on-chip bio-sensing applications. We report the highest responsivity of 0.81 A/W for a 5 $\mu m$ long device.…
We demonstrate a thermal infrared (IR) detector based on an ultra-high-quality-factor (Q) whispering-gallery-mode (WGM) microtoroidal silica resonator, and investigate its performance to detect IR radiation at 10 micron wavelength. The…
The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while…
Mid-infrared (MIR) emitters are critical components in advanced photonic systems, driving progress in fields such as chemical sensing, environmental monitoring, medical diagnostics, thermal imaging and free-space communications.…
We demonstrate integration of an amorphous silicon photodetector with thin film lithium niobate photonic platform operating in the visible wavelength range. We present the details of the design, fabrication, integration and experimental…
We demonstrate photon-noise limited performance at sub-millimeter wavelengths in feedhorn-coupled, microwave kinetic inductance detectors (MKIDs) made of a TiN/Ti/TiN trilayer superconducting film, tuned to have a transition temperature of…
The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops by implanting boron into silicon and annealing represents an…
Thermophotovoltaic (TPV) cells are increasingly attractive for applications in industrial waste heat harvesting, aerospace energy management, and compact power generation. Deploying midwave-infrared (MWIR) TPV in practical applications…
Silicon photonics faces a persistent challenge in extending photodetection capabilities beyond the 1.6 um wavelength range, primarily due to the lack of appropriate epitaxial materials. Colloidal quantum dots (QDs) present a promising…
III-V semiconductor mid-infrared photodetectors based on intersubband transitions hold a great potential for ultra-high-speed operation up to several hundreds of GHz. In this work we exploit a ~350nm-thick GaAs/Al0.2Ga0.8As…
Recent approaches to develop infrared photodetectors characterized by high sensitivities, broadband spectral coverage, easy integration with silicon electronics and low cost have been based on hybrid structures of transition metal…