Related papers: Roadmap for gallium arsenide spin qubits
In this paper initial experiments towards constructing simple quantum gates in a solid state material are presented. Instead of using specially tailored materials, the aim is to select a subset of randomly distributed ions in the material,…
We analyze and give estimates for the long-distance coupling via floating metallic gates between different types of spin qubits in quantum dots made of different commonly used materials. In particular, we consider the hybrid, the…
Hole spin qubits in planar Ge heterostructures are one of the frontrunner platforms for scalable quantum computers. In these systems, the spin-orbit interactions permit efficient all-electric qubit control. We propose a minimal design…
Simulations using highly tunable quantum systems may enable investigations of condensed matter systems beyond the capabilities of classical computers. Quantum dots and donors in semiconductor technology define a natural approach to…
The spin states of single electrons in gate-defined quantum dots satisfy crucial requirements for a practical quantum computer. These include extremely long coherence times, high-fidelity quantum operation, and the ability to shuttle…
An all-electrical spin resonance effect in a GaAs few-electron double quantum dot is investigated experimentally and theoretically. The magnetic field dependence and absence of associated Rabi oscillations are consistent with a novel…
Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be…
A single atom is the prototypical quantum system, and a natural candidate for a quantum bit - the elementary unit of a quantum computer. Atoms have been successfully used to store and process quantum information in electromagnetic traps, as…
We present efficient methods to reliably characterize and tune gate-defined semiconductor spin qubits. Our methods are designed to target the tuning procedures of semiconductor double quantum dot in GaAs heterostructures, but can easily be…
The knowledge of electron and hole g-factors, their control and engineering are key for the usage of the spin degree of freedom for information processing in solid state systems. The electronic g-factor will be materials dependent, the…
Integrated quantum photonics is a promising approach for future practical and large-scale quantum information processing technologies, with the prospect of on-chip generation, manipulation and measurement of complex quantum states of light.…
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…
Several topics on the implementation of spin qubits in quantum dots are reviewed. We first provide an introduction to the standard model of quantum computing and the basic criteria for its realization. Other alternative formulations such as…
In this chapter quantum many body theoretical methods have been used to study properties of GaAs - and InAs - based, small semiconductor compound quantum dots (QDs) containing manganese or vanadium atoms. Interest to such systems has grown…
We exploit hyperfine interactions in a single Mn-ion confined in a quantum dot (QD) to create a qudit, i.e. a multi-level quantum-bit system, with well defined, addressable and robust set of spin states for the realization of universal…
Aluminum gallium arsenide has highly desirable properties for integrated parametric optical interactions: large material nonlinearities, maturely established nanoscopic structuring through epitaxial growth and lithography, and a large band…
The spin states of electrons and holes confined in InAs quantum dot molecules have recently come to fore as a promising system for the storage or manipulation of quantum information. We describe here a feasible scheme for complete quantum…
GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly-confined 0D and…
Scalable architectures for quantum computing using semiconductor quantum dots require interactions between qubits beyond adjacent quantum dots. Here, we propose using nanowires of electrons to mediate the interaction between two quantum…
Self-assembled InAs quantum dots (QDs) are promising optomechanical elements due to their excellent photonic properties and sensitivity to local strain fields. Microwave-frequency modulation of photons scattered from these efficient quantum…