Related papers: Introduction of Sr into Bi2Se3 thin films by molec…
Ternary chalcogenides such as the parkerites and shandites are a broad class of materials exhibiting rich diversity of transport and magnetic behavior as well as an array of topological phases including Weyl and Dirac nodes. However, they…
$\require{mhchem}$Topological superconductivity is of great contemporary interest and has been proposed in doped $\ce{Bi2Se3}$ in which electron-donating atoms such as Cu, Sr or Nb have been intercalated into the $\ce{Bi2Se3}$ structure.…
The recent emergence of topological insulators (TI) has spurred intensive efforts to grow TI thin films on various substrates. However, little is known about how robust the topological surface states (TSS) are against disorders and other…
We report a reproducible synthetic method for superconducting Cu-intercalated Bi2Se3 by an improved melt growth method. Avoiding the production of Cu2Se, which has a higher melting point than that of Bi2Se3, and quenching Cu-Bi-Se mixtures…
4d transition metal oxides have emerged as promising materials for numerous applications including high mobility electronics. SrNbO$_{3}$ is one such candidate material, serving as a good donor material in interfacial oxide systems and…
Vanadium silicide, V$_3$Si, is a promising superconductor for silicon-based superconducting (SC) devices due to its compatibility with silicon substrates and its potential for integration into existing semiconductor technologies. However,…
We observe proximity-induced superconductivity in the \textit{in situ} prepared heterostructures constructed by topological insulator Bi$_{2}$Te$_{3}$ thin films and high-temperature cuprate superconductors…
We investigate the ultrafast transient absorption spectrum of Bi2Se3 topological insulator. Bi2Se3 single crystal is grown through conventional solid-state reaction routevia self-flux method. The structural properties have been studied in…
Ultra-thin topological insulator nanostructures, in which coupling between top and bottom surface states takes place, are of great intellectual and practical importance. Due to the weak Van der Waals interaction between adjacent quintuple…
The top-down synthesis of inherently ferroelectric semiconductors and their integration with traditional material platforms have the potential to enable new low power logic devices, and to harness the bulk photoelectric effect for more…
In this work, we patterned a two-dimensional electron gas (2DEG) on the surface of a SrTiO$_3$ thin film grown homoepitaxially on SrTiO$_3$ by hybrid molecular beam epitaxy (hMBE). We explored the superconducting dome in this material…
We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is…
We have investigated the evolution of the electronic properties of La1-xSrxCrO3 (for the full range of x) epitaxial films deposited by molecular beam epitaxy (MBE) using x-ray diffraction, x-ray photoemission spectroscopy, Rutherford…
We present a newly developed facility, comprised of a combinatorial laser molecular beam epitaxy system and an in-situ scanning tunneling microscopy (STM). This facility aims at accelerating the materials research in a highly efficient way,…
Topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk bandgap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that Group V-VI…
High-index Bi2Se3(221) film has been grown on In2Se3-buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial Bi2Se3(221) can be attributed to the layered…
Proximity-effect-induced superconductivity was studied in epitaxial topological insulator Bi2Se3 thin films grown on superconducting NbSe2 single crystals. A point contact spectroscopy (PCS) method was used at low temperatures down to 40…
We present a comprehensive study of the crystal structure of the thin-film, ferromagnetic topological insulator (Bi, Sb)$_{2-x}$V$_x$Te$_3$. The dissipationless quantum anomalous Hall edge states it manifests are of particular interest for…
The selective-area epitaxy (SAE) is a useful technique to grow epitaxial films with a desired shape on a pre-patterned substrate. Although SAE of patterned topological-insulator (TI) thin films has been performed in the past, there has been…
Superconductivity at 33 K in Sr2VO3FeAs is completely suppressed by small amounts of V-doping in Sr2VO3[Fe0.93(+/-0.01)V0.07(+/-0.01)]As. The crystal structures and exact stoichiometries are determined by combined neutron- and x-ray powder…