Related papers: Quantum-limit Hall effect with large carrier densi…
The fractional quantum Hall effect (FQHE) occurs at certain magnetic field strengths B*(n) in a two-dimensional electron gas of density n at strong magnetic fields perpendicular to the plane of the electron gas. At these magnetic fields…
The topological states of matter and topological materials have been attracting extensive interests as one of the frontier topics in condensed matter physics and materials science since the discovery of quantum Hall effect in 1980s. So far…
Recently the Quantum Spin Hall effect (QSH) was theoretically predicted and experimentally realized in a quantum wells based on binary semiconductor HgTe[1-3]. QSH state and topological insulators are the new states of quantum matter…
Recent theory predicted that the Quantum Spin Hall Effect, a fundamentally novel quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We have fabricated such sample structures…
The quantized version of anomalous Hall effect realized in magnetic topological insulators (MTIs) has great potential for the development of topological quantum physics and low-power electronic/spintronic applications. To enable…
The fractional quantum Hall (FQH) effect refers to the strongly-correlated phenomena and the associated quantum phases of matter realized in a two-dimensional gas of electrons placed in a large perpendicular magnetic field. In such systems,…
We consider a holographic description of a system of strongly coupled fermions in 2+1 dimensions based on a D7-brane probe in the background of D3-branes, and construct stable embeddings by turning on worldvolume fluxes. We study the system…
In a GaAs/AlGaAs quantum well of electron density 1x10^{11} cm^{-2} we observe a fractional quantum Hall effect (FQHE) at filling factors nu=4/11, and 5/13, and weaker states at nu=6/17, 4/13, 5/17 and 7/11. These sequences of fractions do…
We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions.…
A quantum statistical theory is developed for a fractional quantum Hall effects in terms of composite bosons (fermions) each of which contains a conduction electron and an odd (even) number of fluxons. The cause of the QHE is by assumption…
In this paper we investigate a possibility for the existence of an analog of the Quantum Hall Effect for neutral particles with a permanent magnetic moment $\mu$ in the presence of crossed inhomogeneous magnetic and electric fields. We…
Topological magnetoelectric effect in a three-dimensional topological insulator is a novel phenomenon, where an electric field induces a magnetic field in the same direction, with a universal coefficient of proportionality quantized in…
We study the practicability of achieving quantum anomalous Hall (QAH) effect with field-tunable Chern number in a magnetically doped, topologically trivial insulating thin film. Specifically in a candidate material,…
The recent discovery of robust quantum anomalous Hall (QAH) effect in rhombohedral multilayer graphene (RMG) aligned with hexagonal boron nitride (hBN) has established a highly versatile platform for correlated topological matter. This…
We discuss the quantum Hall effect of bilayer graphene with finite gate voltage where the Fermi energy exceeds the interlayer hopping energy. We calculated magnetic susceptibility, diagonal and off-diagonal conductivities in…
We predict the emergence a state of matter with intertwined ferromagnetism, charge order and topology in fractionally filled moir\'e superlattice bands. Remarkably, these quantum anomalous Hall crystals exhibit a quantized integer Hall…
Recent work has extended topological band theory to open, non-Hermitian Hamiltonians, yet little is understood about how non-Hermiticity alters the topological quantization of associated observables. We address this problem by studying the…
The quantum Hall effect is generally understood for free electron gases, in which topologically protected edge states between Landau levels (LLs) form conducting channels at the edge of the sample. In periodic crystals, the LLs are…
Physical systems with non-trivial topological order find direct applications in metrology[1] and promise future applications in quantum computing[2,3]. The quantum Hall effect derives from transverse conductance, quantized to unprecedented…
Magneto-transport measurements in a clean two-dimensional electron system confined to a wide GaAs quantum well reveal that, when the electrons occupy two electric subbands, the sequences of fractional quantum Hall states observed at high…