Related papers: Voltage-controlled magnetic anisotropy under the e…
Voltage controlled magnetic anisotropy (VCMA) is an efficient way to manipulate the magnetization states in nanomagnets, promising for low-power spintronic applications. The underlying physical mechanism for VCMA is known to involve a…
Voltage control of magnetic anisotropy (VCMA) in magnetic heterostructures is a key technology for achieving energy-efficiency electronic devices with ultralow power consumption. Here, we report the first demonstration of the VCMA effect in…
The conventional computer architecture has been facing challenges answering the ever-increasing demands from emerging applications, such as AI, for energy-efficient computation and memory hardware systems. Computational Random Access Memory…
The high current density required by Magnetic Tunneling Junction (MTJ) switching driven by Spin Transfer Torque (STT) effect leads to large power consumption and severe reliability issues therefore hinder the timetable for STT Magnetic…
The voltage-controlled magnetic anisotropy (VCMA) effect in FeB and FeB/W films was measured by four independent methods. All measurements are consistent and show the same tendency. The coercive field, Hall angle, anisotropy field, the…
Recently, perpendicular magnetic anisotropy (PMA) and its voltage control (VC) was demonstrated for Cr/Fe/MgO (Physical Review Applied 5, 044006 (2016)). In this study, we shed a light on the origin of large voltage-induced anisotropy…
Voltage control of magnetic anisotropy (VCMA) induced by charge accumulation is typically considered as an ultrafast process, enabling energy-efficient and high-speed magnetization switching in spintronic devices. In this work, we…
Voltage controlled magnetic anisotropy (VCMA) is a low-energy alternative to manipulate the ferromagnetic state, which has been recently considered also in antiferromagnets (AFMs). Here, we theoretically demonstrate that VCMA can be used to…
Using micromagnetic simulations, we study the interplay between strongly voltage-controlled magnetic anisotropy (VCMA), $\Delta K = \pm$200 kJ/m$^3$, and gate width, $w=$ 10--400 nm, in voltage-gated W/CoFeB/MgO based nano-constriction spin…
The interplay between magneto-electricity (ME) and magneto-elasticity (MEL) is studied in the context of voltage-controlled magnetic anisotropy (VCMA). Strain plays more than a role of changing lattice constant but that of the internal…
Quantum-well (QW) devices have been extensively investigated in semiconductor structures. More recently, spin-polarized QWs were integrated into magnetic tunnel junctions (MTJs). In this work, we demonstrate the spin-based control of the…
A low power magnetization switching scheme based on the voltage control of magnetic anisotropy (VCMA) is proposed. In contrast to the conventional switching scheme using VCMA, where the magnetic anisotropy is eliminated during the voltage…
Voltage-induced ferromagnetic resonance (V-FMR) in magnetic tunnel junctions (MTJs) with a W buffer is investigated. Perpendicular magnetic anisotropy (PMA) energy is controlled by both thickness of a CoFeB free layer deposited directly on…
Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…
We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF) free layer, where the magnetic state of one sublayer is…
In this work, we utilize voltage controlled magnetic anisotropy (VCMA) to manipulate magnetic skyrmions that are fixed in space. Memory devices based on this strategy can potentially be of smaller footprint and better energy efficiency than…
In crossbar array structures, which serves as an "In-Memory" compute engine for Artificial Intelligence hardware, write sneak path problem causes undesired switching of devices that degrades network accuracy. While custom crossbar…
Spin Hall effect (SHE) and voltage-controlled magnetic anisotropy (VCMA) are two promising methods for low-power electrical manipulation of magnetization. Recently, magnetic field-free switching of perpendicular magnetization through SHE…
We propose an all-electric implementation of a precessionally switched perpendicular magnetic anisotropy magneto-tunneling-junction (p-MTJ) based toggle memory cell where data is written with voltage-controlled-magnetic-anisotropy (VCMA)…
The paper investigates the systematic dependencies of the anisotropy field and the strength of spin-orbit (SO) interaction on gate voltage in Ta/FeB/MgO nanomagnets. Our findings reveal an intriguing opposite polarity in the gate-voltage…