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Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect transistor technology, are enabling continued scaling and enhanced performance in advanced semiconductor nodes.…
Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two…
We fabricate planar all-graphene field-effect transistors with self-aligned side-gates at 100 nm from the main graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1V with conductance modulation of…
In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor…
In this report, the hysteresis behaviors of PEI:LiClO4 and PEG:LiClO4 electrolyte gate and back gate Graphene-on-SiO2 FET were analyzed by gate-voltage source-drain current modulation. It is shown that both the sweeping rate and the sweep…
Field-Effect Transistors with graphene channels or GFETs are an interesting alternative for the detection of analytes in biological fluids since the electrical behavior of the channel changes when exposed to a sample (among other detection…
We explore the dependence of electrical transport in a graphene field effect transistor (GraFET) on the flow of the liquid within the immediate vicinity of that transistor. We find large and reproducible shifts in the charge neutrality…
Graphene is an ultrathin material, which allows us to control surface phenomena by means of field-effect gating. Among various surface phenomena, photo-oxidation is known to be a facile method to largely control the electronic structure of…
By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these…
Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon electronic era. For this reason, experimental research on…
Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of…
The Hall resistance obtained in liquid gated Hall effect measurement of graphene demonstrates a higher sensitivity than the sheet resistance and the gate-source current for L-histidine of different concentrations in the pM range. This…
Graphene flow sensors hold great prospects for applications, but also encounter many difficulties, such as unwanted electrochemical phenomena, low measurable signal and limited dependence on the flow direction. This study proposes a novel…
We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used,…
We report the observation of the terahertz-induced ratchet effect in graphene-based two-dimensional (2D) metamaterials. The metamaterial consists of a graphite gate patterned with an array of triangular antidots placed under a graphene…
We discuss the origin of an additional dip other than the charge neutrality point observed in transfer characteristics of graphene-based field-effect transistors. The double-dip is proved to arise from charge transfer between graphene and…
We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current…
Graphene, the atomically-thin honeycomb carbon lattice, is a highly conducting 2D material whose exposed electronic structure offers an ideal platform for sensing. Its biocompatible, flexible, and chemically inert nature associated to the…
We demonstrate a mechanism for a dual layer, vertical field-effect transistor, in which nearly-depleting one layer will extend its wavefunction to overlap the other layer and increase tunnel current. We characterize this effect in a…
We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. A special attention was given to determining the dominant noise sources in…