Related papers: Efficiency Models for GaN-based Light-Emitting Dio…
A lot of technological advances depend on next-generation materials, such as graphene, which enables a raft of new applications, for example better electronics. Manufacturing such materials is often difficult; in particular, producing…
The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood. The key difficulty in the description of the dominant…
Thin-film lithium niobate is a promising platform owing to its large electro-optic coefficients and low propagation loss. However, the large footprints of devices limit their application in large-scale integrated optical systems. A crucial…
The efficiency of an organic light-emitting diode (OLED) is fundamentally governed by the spin of recombining electron-hole pairs (singlet and triplet excitons), since triplets cannot usually emit light. The singlet-triplet energy gap, a…
Towards radiation tolerant sensors for pico-second timing, several dopants are explored. Using a common mask, CNM produced LGADs with boron, boron + carbon and gallium implanted gain layers are studied under neutron and proton irradiation.…
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors…
The past ten years have seen the advent of silicon-based precise timing detectors for charged particle tracking. The underlying reason for this evolution is a design innovation: the Low-Gain Avalanche Diode (LGAD). In its simplicity, the…
Diodes made of heterostructures of the 2D material graphene and conventional 3D materials are reviewed in this manuscript. Several applications in high frequency electronics and optoelectronics are highlighted. In particular, advantages of…
This work demonstrates the first nonpolar vertical GaN on GaN pn power diodes grown on m-plane free standing substrates by MOCVD. The SEM and HRXRD results showed the good crystal quality of the homoepitaxial nonpolar structure with low…
Understanding the properties of novel solid-state quantum emitters is pivotal for a variety of applications in field ranging from quantum optics to biology. Recently discovered defects in hexagonal boron nitride are especially interesting,…
GaN high electron mobility transistors (HEMT) have gained some foothold in the power electronics industry due to wide frequency bandwidth and power handling. The material offers a wide bandgap and higher critical field strength compared to…
We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitaxy. Highly doped 350 nm thick GaN:Si cladding layer with Si…
This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of…
This paper summarises progress made towards the radiation hardening of LED emergency luminaires for evacuation and emergency response within the underground areas of the CERN accelerator complex. The objective has been to radiation harden…
Owing to its wide (3.4 eV) and direct-tunable band gap, gallium nitride (GaN) is an excellent material platform for UV photodetectors. GaN is also stable in radiation-rich and high-temperature environments, which makes photodetectors…
We report novel graphene nanoribbon (GNR)/semiconductor nanowire (SNW) heterojunction light-emitting diodes (LEDs) for the first time. The GNR and SNW have a face-to-face contact structure, which has the merit of bigger active region. ZnO,…
Light emitting diodes (LEDs) in the deep ultra-violet (DUV) offer new perspectives for multiple applications ranging from 3D printing to sterilization. However, insufficient light extraction severely limits their efficiency. Nanostructured…
Lithium-ion technologies are increasingly employed to electrify transportation and provide stationary energy storage for electrical grids, and as such their development has garnered much attention. However, their deployment is still…
Erbium (Er) doped GaN has been studied extensively for optoelectronic applications, yet its defect physics is still not well understood. In this work, we report a first-principles hybrid density functional study of the structure,…
In the rapidly evolving area of integrated photonics, there is a growing need for materials that satisfy the particular requirements of increasingly complex and specialized devices and applications. Present photonic material platforms have…