Related papers: Gate-defined Quantum Point Contact in an InSb Two-…
We experimentally study quantized conductance in an electrostatically defined constriction in a high-mobility InAs two-dimensional electron gas. A parallel magnetic field lifts the spin degeneracy and allows for the observation of plateaus…
In this study, we observe that the conductance of a quantum point contact on a GaAs/AlGaAs double quantum well depends significantly on the magnetic field perpendicular to the two-dimensional electron gas. In the presence of the magnetic…
Low-temperature electrical conductance spectroscopy measurements of quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are used to study the Zeeman splitting of 1D subbands for both in-plane and out-of-plane magnetic…
We present transport experiments performed in high quality quantum point contacts embedded in a GaAs two-dimensional hole gas. The strong spin-orbit interaction results in peculiar transport phenomena, including the previously observed…
The strength of the Zeeman splitting induced by an applied magnetic field is an important factor for the realization of spin-resolved transport in mesoscopic devices. We measure the Zeeman splitting for a quantum point contact etched into a…
We report an experimental study of quantum point contacts defined in a high-quality strained germanium quantum well with layered electric gates. At zero magnetic field, we observe quantized conductance plateaus in units of 2$e^2/h$.…
Zeeman splitting of 1D hole subbands is investigated in quantum point contacts (QPCs) fabricated on a (311) oriented GaAs-AlGaAs heterostructure. Transport measurements can determine the magnitude of the g-factor, but cannot usually…
We investigate transport properties of stable gate-defined quantum dots formed in an InSb$_{0.87}$As$_{0.13}$ quantum well. High $\textit{g}$-factor and strong spin-orbit-coupling make InSb$_x$As$_{1-x}$ a promising platform for exploration…
Strong spin-orbit coupling, the resulting large $g$ factor, and small effective mass make InAs an attractive material platform for inducing topological superconductivity. The surface Fermi level pinning in the conduction band enables highly…
We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the quantum wells display a significantly…
We have measured the Zeeman splitting of quantum levels in few-electron quantum dots (QDs) formed in narrow bandgap InSb nanowires via the Schottky barriers at the contacts under application of different spatially orientated magnetic…
We report a zero-bias peak in the differential conductance of a Quantum Point Contact (QPC), which splits in an external magnetic field. The peak is observed over a range of device conductance values starting significantly below $2e^2/h$.…
In this letter, we report the magneto-electronic properties of high mobility InAs quantum point contacts grown on InP substrates. The 1D conductance reaches a maximum value of 17 plateaus, quantized in units of 2e^2/h, where e is the…
Here, we employ a numerical approach to investigate the transport and conductance characteristics of a quantum point contact. A quantum point contact is a narrow constriction of a width comparable to the electron wavelength defined in a…
The out-of-plane g-factor g_perp for quasi-2D holes in a (100) GaAs heterostructure is studied using a variable width quantum wire. A direct measurement of the Zeeman splitting is performed in a magnetic field applied perpendicular to the…
We have studied a near-surface two-dimensional electron gas based on an InAs quantum well on a GaAs substrate. In devices without a dielectric layer we estimated large electron mobilities on the order of $10^5$ cm$^2$/Vs. We have observed…
Due to a strong spin-orbit interaction and a large Land\'e g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are…
We report the realization of a hybrid superconductor-quantum dot device by means of top-down nanofabrication starting from a two dimensional electron gas in a InGaAs/InAlAs semiconductor heterostructure. The quantum dot is defined by…
The cross-over from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields are studied in the diffusive to quasiballistic and zero-field to quantum Hall regime.…
Many modern spin-based devices rely on the spin-orbit interaction, which is highly sensitive to the host semiconductor heterostructure and varies substantially depending on crystal direction, crystal asymmetry (Dresselhaus), and quantum…