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Related papers: Astability versus Bistability in van der Waals Tun…

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Metal-based electronics is attractive for fast and radiation-hard electronic circuits and remains one of the longstanding goals for researchers. The emergence of 1T-TaS$_2$, a layered material exhibiting strong charge density wave (CDW)…

Mesoscale and Nanoscale Physics · Physics 2020-08-12 Mehak Mahajan , Kausik Majumdar

Two-dimensional (2D) semiconductors have emerged as leading candidates for the development of low-power and multifunctional computing applications, thanks to their qualities such as layer-dependent band gap tunability, high carrier…

We fabricate and measure electrically-gated tunnel junctions in which the insulating barrier is a sliding van der Waals ferroelectric made from parallel-stacked bilayer hexagonal boron nitride and the electrodes are single-layer graphene.…

Mesoscale and Nanoscale Physics · Physics 2025-04-15 Bozo Vareskic , Finn G. Kennedy , Takashi Taniguchi , Kenji Watanabe , Kenji Yasuda , Daniel C. Ralph

One-dimensional (1D) van der Waals (vdW) materials offer nearly defect-free strands as channel material in the field-effect transistor (FET) devices and probably, a better interconnect than conventional copper with higher current density…

Mesoscale and Nanoscale Physics · Physics 2023-07-12 Bikash Das , Kapildeb Dolui , Rahul Paramanik , Tanima Kundu , Sujan Maity , Anudeepa Ghosh , Mainak Palit , Subhadeep Datta

The negative differential resistance (NDR) tunnel diodes are promising alternative devices for beyond-CMOS computing as they offer several potential applications when integrated with transistors. We propose a novel semiconductor-free NDR…

Mesoscale and Nanoscale Physics · Physics 2022-10-26 Ersoy Sasioglu , Ingrid Mertig

Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin…

Ferroelectric polarization switching in electrically controlled van der Waals multiferroic tunnel junctions (vdW-MFTJs) causes atomic migration, compromising device stability and fatigue resistance. Here we propose a fully magnetically…

Materials Science · Physics 2025-05-20 Zhi Yan , Xujin Zhang , Jianhua Xiao , Cheng Fang , Xiaohong Xu

Van der Waals (vdW) heterostructures made of two-dimensional materials have been demonstrated to be versatile architectures for optoelectronic applications due to strong light-matter interactions. However, most of light-controlled phenomena…

Mesoscale and Nanoscale Physics · Physics 2018-08-21 Yu Wang , Erfu Liu , Anyuan Gao , Tianjun Cao , Mingsheng Long , Chen Pan , Lili Zhang , Junwen Zeng , Chenyu Wang , Weida Hu , Shi-Jun Liang , Feng Miao

Van der Waals (vdW) materials exhibit a variety of states that can be switched with low power at low temperatures, offering a viable cryogenic "flash memory" required for the classical control electronics for solid-state quantum information…

Magnetic tunnel junctions (MTJs) have been widely applied in spintronic devices for efficient spin detection through the imbalance of spin polarization at the Fermi level. The van der Waals (vdW) nature of two-dimensional (2D) magnets with…

Materials Science · Physics 2024-01-31 Wen Jin , Xinlu Li , Gaojie Zhang , Hao Wu , Xiaokun Wen , Li Yang , Jie Yu , Bichen Xiao , Wenfeng Zhang , Jia Zhang , Haixin Chang

Noise-induced switching between coexisting metastable states occurs in a wide range of far-from-equilibrium systems including micro-mechanical oscillators, epidemiological and climate change models, and nonlinear electronic transport in…

Statistical Mechanics · Physics 2019-05-01 Stephen W. Teitsworth , Matthew E. Olson , Yuriy Bomze

The escalating demand for memory scaling requires switching mechanisms that remain reliable at atomic thickness while operating with minimal energy consumption. Sliding ferroelectricity provides a promising platform for this challenge: the…

Mesoscale and Nanoscale Physics · Physics 2026-03-31 Ruixue Wang , Jiangang Chen , Er Pan , Wunan Wang , Zefen Li , Fan Yang , Hongmiao Zhou , Zhaoren Xie , Qing Liu , Xiao Luo , Junhao Chu , Wenwu Li , Fucai Liu

Tunnel junctions, a well-established platform for high-resolution spectroscopy of superconductors, require defect-free insulating barriers with clean engagement to metals on both sides. Extending the range of materials accessible to tunnel…

Superconductivity · Physics 2018-03-20 Tom Dvir , Freek Massee , Lotan Attias , Maxim Khodas , Marco Aprili , Charis H. L. Quay , Hadar Steinberg

Ferroelecticity, one of the keys to realize nonvolatile memories owing to the remanent electric polarization, has been an emerging phenomenon in the two-dimensional (2D) limit. Yet the demonstrations of van der Waals (vdW) memories using 2D…

Exploring the electron tunneling mechanisms in diverse materials systems constitutes a versatile strategy for tailoring the properties of optoelectronic devices. In this domain, bipolar vertical tunneling junctions composed of van der Waals…

Atomically-thin 2D semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their full…

Van der Waals (vdW) p-n heterojunctions are important building blocks for advanced electronics and optoelectronics, in which high-quality heterojunctions essentially determine device performances or functionalities. Creating tunable…

Van der Waals (vdW) heterojunctions composed of 2-dimensional (2D) layered materials are emerging as a solid-state materials family that exhibit novel physics phenomena that can power high performance electronic and photonic applications.…

Two-dimensional (2D) van der Waals (vdW) magnets with layer-dependent magnetic states and/or diverse magnetic interactions and anisotropies have attracted extensive research interest. Despite the advances, a notable challenge persists in…

Nanofluidic ionic transistors typically require gate voltages above 1 V and operate only at sub millimolar ionic strengths, limiting their biocompatible applications. We demonstrate ionic transistors consisting of single sub 10 nm nanopores…

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